TY - JOUR
T1 - Study of antimony selenide hole-transport material for Mo/Sb2Se3/MAPbI3/C60/GZO/Ag heterojunction planar solar cells
AU - Wu, G. M.
AU - Tseng, C. C.
AU - Chang, T. W.
AU - Feng, W. S.
AU - Chen, D. W.
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2021/1/15
Y1 - 2021/1/15
N2 - Antimony selenide (Sb2Se3) photovoltaic exhibits low energy band gap for effective wide solar spectrum utilization. A new heterojunction planar solar cell design has been investigated using thin Sb2Se3 hole-transporting material (HTM) layer between bi-layer molybdenum (Mo) electrode and CH3NH3PbI3 (MAPbI3) perovskite active absorbing layer. The solar cell structure was prepared as Mo/Sb2Se3/MAPbI3/C60/GZO/Ag on fluorine-doped tin oxide-coated glass substrate. Thus, the HTM layer, active absorbing layer, electron-transporting layer, transparent conductive oxide layer, and top electrode contact layer, has been made of Sb2Se3, MAPbI3, C60, gallium-doped zinc oxide, and silver, respectively. The Sb2Se3 HTM layers were also annealed at different temperatures of 300–600 °C. Scanning electron microscopy study showed improved crystal grains with the annealing temperature. This new heterojunction planar solar cell exhibited high power-conversion efficiency of 16.8% with the 200 nm Sb2Se3 HTM layer that was annealed at 600 °C. The device corresponding VOC, JSC, FF, Rs, and Pmax had been 1.07 V, 20.7 mA/cm2, 75.8%, 18.6 Ω, and 1.68 mW, respectively.
AB - Antimony selenide (Sb2Se3) photovoltaic exhibits low energy band gap for effective wide solar spectrum utilization. A new heterojunction planar solar cell design has been investigated using thin Sb2Se3 hole-transporting material (HTM) layer between bi-layer molybdenum (Mo) electrode and CH3NH3PbI3 (MAPbI3) perovskite active absorbing layer. The solar cell structure was prepared as Mo/Sb2Se3/MAPbI3/C60/GZO/Ag on fluorine-doped tin oxide-coated glass substrate. Thus, the HTM layer, active absorbing layer, electron-transporting layer, transparent conductive oxide layer, and top electrode contact layer, has been made of Sb2Se3, MAPbI3, C60, gallium-doped zinc oxide, and silver, respectively. The Sb2Se3 HTM layers were also annealed at different temperatures of 300–600 °C. Scanning electron microscopy study showed improved crystal grains with the annealing temperature. This new heterojunction planar solar cell exhibited high power-conversion efficiency of 16.8% with the 200 nm Sb2Se3 HTM layer that was annealed at 600 °C. The device corresponding VOC, JSC, FF, Rs, and Pmax had been 1.07 V, 20.7 mA/cm2, 75.8%, 18.6 Ω, and 1.68 mW, respectively.
KW - Antimony selenide
KW - C
KW - GZO
KW - Hole-transport material, MAPbI
UR - http://www.scopus.com/inward/record.url?scp=85094584673&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2020.126550
DO - 10.1016/j.surfcoat.2020.126550
M3 - 文章
AN - SCOPUS:85094584673
SN - 0257-8972
VL - 405
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
M1 - 126550
ER -
