@inproceedings{f7908448872f4dac93f830b3d00bd1ff,
title = "Study of carbon in thermal oxide formed on 4H-SiC by XPS",
abstract = "In this work, we present results on the study of bonding and concentration of carbon in 4H-SiC MOS structure by x-ray photoelectron spectroscopy (XPS). The XPS spectra were fitted by several Gaussian lineshape functions. It is found that the so-called carbon clusters (C-C bonds) appear at the interface of SiO2/SiC, but are not seen in the oxide bulk. However, there are still some SiOxCy and Si-C bonds inside the oxide and the integrated area ratio of SiOxCy/Si-C bonds increases when further away from the SiO2/SiC interface. These observations can be interpreted in terms of the dynamic oxidation process that transforms Si-C bonds into SiOxCy bonds, which are then further oxidized to form SiO2 bonds.",
keywords = "4H-SiC, Carbon clusters, Interface, MOS, Oxidation, XPS",
author = "P. Zhao and Rusli and Xia, \{J. H.\} and Tan, \{C. M.\} and Y. Liu and Tin, \{C. C.\} and Yoon, \{S. F.\} and Zhu, \{W. G.\} and J. Ahn",
year = "2005",
doi = "10.4028/0-87849-963-6.653",
language = "英语",
isbn = "0878499636",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "653--656",
booktitle = "Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials",
address = "瑞士",
note = "5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 ; Conference date: 31-08-2004 Through 04-09-2004",
}