TY - JOUR
T1 - Study of fabrication and characterization of high power 850 nm vertical-cavity surface-emitting laser arrays
AU - Wu, G. M.
AU - Kung, F. C.
AU - Lee, C. Y.
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/4/15
Y1 - 2020/4/15
N2 - In this paper, we investigated high power selectively oxidation-confined AlxGa1 − xAs/GaAs 850 nm vertical-cavity surface-emitting laser (VCSEL) and fabricated two-dimensional VCSEL arrays by photolithography using photo masks. Inductively coupled plasma (ICP) was employed to create the deep platform during the mesa process. The number of illuminating lasers has been designed at 60, 85, and 109 in the array. We further studied the influence of the number of illuminating lasers on the characteristics of the VCSEL devices. The threshold current was found to be increased significantly at about 93 mA, 118 mA, and 149 mA, respectively. The injection current should produce a greater than the critical current density to meet the criteria for population inversion. However, the corresponding voltage remained almost unchanged, in the range of 1.57–1.63 V. The maximum optical output power was increased even more appreciably. It was measured at 448 mW, 592 mW, and 746 mW, respectively. On the other hand, the device equivalent series resistance was decreased with more illumination lasers in the array. The averaged resistance has been estimated at 4.16 Ω, 3.14 Ω, and 2.47 Ω, respectively. In addition, the optical spectrum became more dispersed, showing more lasing modes for the samples with the highest number in illumination lasers in the array. The peak wavelength full width at half-maximum was also slightly increased. The related electro-optical characteristics have been summarized and further discussed.
AB - In this paper, we investigated high power selectively oxidation-confined AlxGa1 − xAs/GaAs 850 nm vertical-cavity surface-emitting laser (VCSEL) and fabricated two-dimensional VCSEL arrays by photolithography using photo masks. Inductively coupled plasma (ICP) was employed to create the deep platform during the mesa process. The number of illuminating lasers has been designed at 60, 85, and 109 in the array. We further studied the influence of the number of illuminating lasers on the characteristics of the VCSEL devices. The threshold current was found to be increased significantly at about 93 mA, 118 mA, and 149 mA, respectively. The injection current should produce a greater than the critical current density to meet the criteria for population inversion. However, the corresponding voltage remained almost unchanged, in the range of 1.57–1.63 V. The maximum optical output power was increased even more appreciably. It was measured at 448 mW, 592 mW, and 746 mW, respectively. On the other hand, the device equivalent series resistance was decreased with more illumination lasers in the array. The averaged resistance has been estimated at 4.16 Ω, 3.14 Ω, and 2.47 Ω, respectively. In addition, the optical spectrum became more dispersed, showing more lasing modes for the samples with the highest number in illumination lasers in the array. The peak wavelength full width at half-maximum was also slightly increased. The related electro-optical characteristics have been summarized and further discussed.
KW - High power
KW - Inductively coupled plasma
KW - Laser array
KW - Surface emitting
UR - http://www.scopus.com/inward/record.url?scp=85080025873&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2020.125489
DO - 10.1016/j.surfcoat.2020.125489
M3 - 文章
AN - SCOPUS:85080025873
SN - 0257-8972
VL - 387
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
M1 - 125489
ER -