Study of high quality indium nitride films grown on Si(100) substrate by RF-MOMBE with GZO and AlN buffer layers

Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system. Ga-doped ZnO (GZO) and Amorphous AlN (a-AlN) film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL). XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about 1.8 m/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.