Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE

Wei Chun Chen*, Shou Yi Kuo, Wei Lin Wang, Jr Sheng Tian, Woei Tyng Lin, Fang I. Lai, Li Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

4 Scopus citations

Abstract

This paper reports on high-quality InN materials prepared on a GaN template using radiofrequency metalorganic molecular beam epitaxy. We also discuss the structural and electrooptical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001]InN // [0001]GaN and (2110)InN // (2110)GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.

Original languageEnglish
Article number468
JournalNanoscale Research Letters
Volume7
DOIs
StatePublished - 2012

Keywords

  • InN
  • Nanorods
  • RF-MOMBE

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