Abstract
The lateral-carrier transport properties of InAs/GaAs quantum-dot (QD) heterostructures were investigated, using photoluminescence spectroscopy. It was found that carrier-thermalization processes was attributed for the anomalous temperture-dependent phenomena, which include emission energy, spectral width and quenching behaviours. In the heterodot system, the increase in temperature had facilitated the redistribution of the photoexcited carriers. The linewidth shrinkages and emission redshifts for the excited- and ground-state transitions in QD assembles were due to the carrie redistribution. It was also observed that the dot-size uniformity was improved by the longer interruption time.
Original language | English |
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Pages (from-to) | 891-893 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 22 |
Issue number | 3 |
DOIs | |
State | Published - 05 2004 |