Study of metal–semiconductor–metal ch₃nh₃pbbr₃ perovskite photodetectors prepared by inverse temperature crystallization method

Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C₆₀ and an Ag electrode on CH₃NH₃PbBr₃ perovskite crystals to complete a photodetector structure, which exhibits a metal–semiconductor–metal (MSM) type structure. First, CH₃NH₃PbBr₃ perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH₃NH₃PbBr₃ perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH₃NH₃PbBr₃ perovskite crystals were observed to form a contact with the Ag/C₆₀ as the photodetector, which revealed a responsivity of 24.5 A/W.