Study of the Fourier-transform infrared spectra of InAs/GaAs quantum dot superlattices for far-infrared photodetectors

Yi Chang Cheng; Ching Ming Yang; Wen How Lan; Jyh Neng Yang; Liann Be Chang

doi:10.1143/jjap.41.1386

Study of the Fourier-transform infrared spectra of InAs/GaAs quantum dot superlattices for far-infrared photodetectors

Yi Chang Cheng^*, Ching Ming Yang, Wen How Lan, Jyh Neng Yang, Liann Be Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Fourier-transform infrared (FTIR) spectra were studied to characterize the self-assembled InAs/GaAs quantum dot superlattices for long-wavelength infrared photodetectors. The superlattices, grown on (001)-oriented GaAs semi-insulating substrates by a solid-source molecular-beam epitaxy system, are composed mainly of 20 layers of Si-doped (5 × 10¹⁸ cm^-3) InAs quantum dot layers and undoped GaAs spacer films. The composition, structural properties and surface morphologies of the InAs quantum dots were evaluated by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The far-infrared absorption signals were observed using the FTIR technique. The analysis of FTIR absorption spectra revealed that the InAs quantum dot superlattices possess an unpolarized absorption feature and only a slight temperature-dependent change of absorption index.

Original language	English
Pages (from-to)	1386-1389
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.41.1386
State	Published - 03 2002
Externally published	Yes

Keywords

Atomic force microscopy (AFM)
Far-infrared photodetector
Fourier-transform infrared (FTIR) spectrum
InAs
Quantum dots
Superlattice

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title = "Study of the Fourier-transform infrared spectra of InAs/GaAs quantum dot superlattices for far-infrared photodetectors",

abstract = "Fourier-transform infrared (FTIR) spectra were studied to characterize the self-assembled InAs/GaAs quantum dot superlattices for long-wavelength infrared photodetectors. The superlattices, grown on (001)-oriented GaAs semi-insulating substrates by a solid-source molecular-beam epitaxy system, are composed mainly of 20 layers of Si-doped (5 × 1018 cm-3) InAs quantum dot layers and undoped GaAs spacer films. The composition, structural properties and surface morphologies of the InAs quantum dots were evaluated by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The far-infrared absorption signals were observed using the FTIR technique. The analysis of FTIR absorption spectra revealed that the InAs quantum dot superlattices possess an unpolarized absorption feature and only a slight temperature-dependent change of absorption index.",

keywords = "Atomic force microscopy (AFM), Far-infrared photodetector, Fourier-transform infrared (FTIR) spectrum, InAs, Quantum dots, Superlattice",

author = "Cheng, {Yi Chang} and Yang, {Ching Ming} and Lan, {Wen How} and Yang, {Jyh Neng} and Chang, {Liann Be}",

year = "2002",

month = mar,

doi = "10.1143/jjap.41.1386",

language = "英语",

volume = "41",

pages = "1386--1389",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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T1 - Study of the Fourier-transform infrared spectra of InAs/GaAs quantum dot superlattices for far-infrared photodetectors

AU - Cheng, Yi Chang

AU - Yang, Ching Ming

AU - Lan, Wen How

AU - Yang, Jyh Neng

AU - Chang, Liann Be

PY - 2002/3

Y1 - 2002/3

N2 - Fourier-transform infrared (FTIR) spectra were studied to characterize the self-assembled InAs/GaAs quantum dot superlattices for long-wavelength infrared photodetectors. The superlattices, grown on (001)-oriented GaAs semi-insulating substrates by a solid-source molecular-beam epitaxy system, are composed mainly of 20 layers of Si-doped (5 × 1018 cm-3) InAs quantum dot layers and undoped GaAs spacer films. The composition, structural properties and surface morphologies of the InAs quantum dots were evaluated by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The far-infrared absorption signals were observed using the FTIR technique. The analysis of FTIR absorption spectra revealed that the InAs quantum dot superlattices possess an unpolarized absorption feature and only a slight temperature-dependent change of absorption index.

AB - Fourier-transform infrared (FTIR) spectra were studied to characterize the self-assembled InAs/GaAs quantum dot superlattices for long-wavelength infrared photodetectors. The superlattices, grown on (001)-oriented GaAs semi-insulating substrates by a solid-source molecular-beam epitaxy system, are composed mainly of 20 layers of Si-doped (5 × 1018 cm-3) InAs quantum dot layers and undoped GaAs spacer films. The composition, structural properties and surface morphologies of the InAs quantum dots were evaluated by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The far-infrared absorption signals were observed using the FTIR technique. The analysis of FTIR absorption spectra revealed that the InAs quantum dot superlattices possess an unpolarized absorption feature and only a slight temperature-dependent change of absorption index.

KW - Atomic force microscopy (AFM)

KW - Far-infrared photodetector

KW - Fourier-transform infrared (FTIR) spectrum

KW - InAs

KW - Quantum dots

KW - Superlattice

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U2 - 10.1143/jjap.41.1386

DO - 10.1143/jjap.41.1386

M3 - 文章

AN - SCOPUS:0036508837

SN - 0021-4922

VL - 41

SP - 1386

EP - 1389

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3 A

ER -

Study of the Fourier-transform infrared spectra of InAs/GaAs quantum dot superlattices for far-infrared photodetectors

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Keywords

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