Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane

Chyuan Haur Kao; Hsian Chen; Kung Shao Chen; Chuan Yu Huang; Ching Hua Huang; Jiun Cheng Ou; Chih Ju Lin; Keng Min Lin; Lien Tai Kuo

doi:10.1109/ICSICT.2010.5667585

Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane

Chyuan Haur Kao^*, Hsian Chen, Kung Shao Chen, Chuan Yu Huang, Ching Hua Huang, Jiun Cheng Ou, Chih Ju Lin, Keng Min Lin, Lien Tai Kuo

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

The first material of silicon dioxide (SiO₂) had been proposed as a chemical transducer element of pH sensitive membrane around the early of 1970s. In 1981 Matsuo et al. proposed Ta₂O₅ as pH sensing membrane [1]. Start from that moment, many materials have been wildly investigated, e.g. Al₂O₃, SnO₂, WO₃. The rare -earth oxide, Samarium oxide (Sm₂O₃), is an attractive material to substitute the previous high-k materials because of its high dielectric constant(15-30) and good chemical and thermal stability with Si material. In this paper, the electrical and physical characteristics of the high-k Sm₂O₃ polyoxides by RF sputtering system deposited on the polycrystalline silicon were studied. It can be seen that the high-k Sm₂O₃ polyoxides with post rapid thermal annealing (RTA) can show lower trapping rates and higher dielectric breakdown fields. Furthermore, the EGFET device with a high-k Sm₂O₃ sensing membrane deposited on polysilicon through reactive sputtering was proposed for high sensitive pH sensing.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1425-1427
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667585
State	Published - 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 01 11 2010 → 04 11 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	01/11/10 → 04/11/10

Access to Document

10.1109/ICSICT.2010.5667585

Cite this

Kao, C. H., Chen, H., Chen, K. S., Huang, C. Y., Huang, C. H., Ou, J. C., Lin, C. J., Lin, K. M., & Kuo, L. T. (2010). Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1425-1427). Article 5667585 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667585

Kao, Chyuan Haur ; Chen, Hsian ; Chen, Kung Shao et al. / Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1425-1427 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{3ac612a666304f3bb52aeee2b6424afc,

title = "Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane",

abstract = "The first material of silicon dioxide (SiO2) had been proposed as a chemical transducer element of pH sensitive membrane around the early of 1970s. In 1981 Matsuo et al. proposed Ta2O5 as pH sensing membrane [1]. Start from that moment, many materials have been wildly investigated, e.g. Al2O3, SnO2, WO3. The rare -earth oxide, Samarium oxide (Sm2O3), is an attractive material to substitute the previous high-k materials because of its high dielectric constant(15-30) and good chemical and thermal stability with Si material. In this paper, the electrical and physical characteristics of the high-k Sm2O3 polyoxides by RF sputtering system deposited on the polycrystalline silicon were studied. It can be seen that the high-k Sm2O3 polyoxides with post rapid thermal annealing (RTA) can show lower trapping rates and higher dielectric breakdown fields. Furthermore, the EGFET device with a high-k Sm2O3 sensing membrane deposited on polysilicon through reactive sputtering was proposed for high sensitive pH sensing.",

author = "Kao, {Chyuan Haur} and Hsian Chen and Chen, {Kung Shao} and Huang, {Chuan Yu} and Huang, {Ching Hua} and Ou, {Jiun Cheng} and Lin, {Chih Ju} and Lin, {Keng Min} and Kuo, {Lien Tai}",

year = "2010",

doi = "10.1109/ICSICT.2010.5667585",

language = "英语",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "1425--1427",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

Kao, CH, Chen, H, Chen, KS, Huang, CY, Huang, CH, Ou, JC, Lin, CJ, Lin, KM & Kuo, LT 2010, Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667585, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1425-1427, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 01/11/10. https://doi.org/10.1109/ICSICT.2010.5667585

Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane. / Kao, Chyuan Haur; Chen, Hsian; Chen, Kung Shao et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1425-1427 5667585 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane

AU - Kao, Chyuan Haur

AU - Chen, Hsian

AU - Chen, Kung Shao

AU - Huang, Chuan Yu

AU - Huang, Ching Hua

AU - Ou, Jiun Cheng

AU - Lin, Chih Ju

AU - Lin, Keng Min

AU - Kuo, Lien Tai

PY - 2010

Y1 - 2010

N2 - The first material of silicon dioxide (SiO2) had been proposed as a chemical transducer element of pH sensitive membrane around the early of 1970s. In 1981 Matsuo et al. proposed Ta2O5 as pH sensing membrane [1]. Start from that moment, many materials have been wildly investigated, e.g. Al2O3, SnO2, WO3. The rare -earth oxide, Samarium oxide (Sm2O3), is an attractive material to substitute the previous high-k materials because of its high dielectric constant(15-30) and good chemical and thermal stability with Si material. In this paper, the electrical and physical characteristics of the high-k Sm2O3 polyoxides by RF sputtering system deposited on the polycrystalline silicon were studied. It can be seen that the high-k Sm2O3 polyoxides with post rapid thermal annealing (RTA) can show lower trapping rates and higher dielectric breakdown fields. Furthermore, the EGFET device with a high-k Sm2O3 sensing membrane deposited on polysilicon through reactive sputtering was proposed for high sensitive pH sensing.

AB - The first material of silicon dioxide (SiO2) had been proposed as a chemical transducer element of pH sensitive membrane around the early of 1970s. In 1981 Matsuo et al. proposed Ta2O5 as pH sensing membrane [1]. Start from that moment, many materials have been wildly investigated, e.g. Al2O3, SnO2, WO3. The rare -earth oxide, Samarium oxide (Sm2O3), is an attractive material to substitute the previous high-k materials because of its high dielectric constant(15-30) and good chemical and thermal stability with Si material. In this paper, the electrical and physical characteristics of the high-k Sm2O3 polyoxides by RF sputtering system deposited on the polycrystalline silicon were studied. It can be seen that the high-k Sm2O3 polyoxides with post rapid thermal annealing (RTA) can show lower trapping rates and higher dielectric breakdown fields. Furthermore, the EGFET device with a high-k Sm2O3 sensing membrane deposited on polysilicon through reactive sputtering was proposed for high sensitive pH sensing.

UR - http://www.scopus.com/inward/record.url?scp=78751539327&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2010.5667585

DO - 10.1109/ICSICT.2010.5667585

M3 - 会议稿件

AN - SCOPUS:78751539327

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1425

EP - 1427

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

Y2 - 1 November 2010 through 4 November 2010

ER -

Kao CH, Chen H, Chen KS, Huang CY, Huang CH, Ou JC et al. Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1425-1427. 5667585. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667585

Study on polysilicon extended gate field effect transistor with samarium oxide sensing membrane

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this