Submicron RIE recessed InGaP/InGaAs doped-channel FETs

Shih Cheng Yang; Hsien Chin Chiu; Ming Jyh Hwu; Wen Kai Wang; Cheng Kuo Lin; Yi Jen Chan

doi:10.1109/TED.2003.813341

Submicron RIE recessed InGaP/InGaAs doped-channel FETs

Shih Cheng Yang^*, Hsien Chin Chiu, Ming Jyh Hwu, Wen Kai Wang, Cheng Kuo Lin, Yi Jen Chan

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

High performance submicron In_0.49Ga_0.51P/In_0.15Ga_0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl₃ +CHF₃ reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (f_T), maximum frequency of oscillation (f_max), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm² gate-dimension DCFET exhibits a saturated P_out of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.

Original language	English
Pages (from-to)	1555-1558
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	6
DOIs	https://doi.org/10.1109/TED.2003.813341
State	Published - 06 2003
Externally published	Yes

Keywords

Doped-channel FET
Power performance
Reactive ion etching
Submicron

Access to Document

10.1109/TED.2003.813341

Cite this

@article{9f4f6b25f4204c348217e754d7074c17,

title = "Submicron RIE recessed InGaP/InGaAs doped-channel FETs",

abstract = "High performance submicron In0.49Ga0.51P/In0.15Ga0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl3 +CHF3 reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (fT), maximum frequency of oscillation (fmax), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm2 gate-dimension DCFET exhibits a saturated Pout of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.",

keywords = "Doped-channel FET, Power performance, Reactive ion etching, Submicron",

author = "Yang, {Shih Cheng} and Chiu, {Hsien Chin} and Hwu, {Ming Jyh} and Wang, {Wen Kai} and Lin, {Cheng Kuo} and Chan, {Yi Jen}",

year = "2003",

month = jun,

doi = "10.1109/TED.2003.813341",

language = "英语",

volume = "50",

pages = "1555--1558",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Submicron RIE recessed InGaP/InGaAs doped-channel FETs

AU - Yang, Shih Cheng

AU - Chiu, Hsien Chin

AU - Hwu, Ming Jyh

AU - Wang, Wen Kai

AU - Lin, Cheng Kuo

AU - Chan, Yi Jen

PY - 2003/6

Y1 - 2003/6

N2 - High performance submicron In0.49Ga0.51P/In0.15Ga0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl3 +CHF3 reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (fT), maximum frequency of oscillation (fmax), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm2 gate-dimension DCFET exhibits a saturated Pout of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.

AB - High performance submicron In0.49Ga0.51P/In0.15Ga0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl3 +CHF3 reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (fT), maximum frequency of oscillation (fmax), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm2 gate-dimension DCFET exhibits a saturated Pout of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.

KW - Doped-channel FET

KW - Power performance

KW - Reactive ion etching

KW - Submicron

UR - http://www.scopus.com/inward/record.url?scp=0042665515&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.813341

DO - 10.1109/TED.2003.813341

M3 - 文章

AN - SCOPUS:0042665515

SN - 0018-9383

VL - 50

SP - 1555

EP - 1558

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Submicron RIE recessed InGaP/InGaAs doped-channel FETs

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this