Submicron RIE recessed InGaP/InGaAs doped-channel FETs

Shih Cheng Yang*, Hsien Chin Chiu, Ming Jyh Hwu, Wen Kai Wang, Cheng Kuo Lin, Yi Jen Chan

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations


High performance submicron In0.49Ga0.51P/In0.15Ga0.85As doped-channel heterostructure field effect transistors (HFETs) have been developed and characterized. In order to achieve a high uniformity of device characteristics crossing the wafer, BCl3 +CHF3 reactive ion etching technology in gate-recessed process is applied to fabricate the InGaP/InGaAs doped-channel FETs. The unity current gain cut-off frequency (fT), maximum frequency of oscillation (fmax), and threshold voltage have been investigated versus the gate-length. The improved microwave performance in smaller gate-length devices is mainly associated with the reduction of the input capacitance. The 0.2 × 200-μm2 gate-dimension DCFET exhibits a saturated Pout of 18.9 dBm, a power density of 388 mW/mm, a PAE of 35%, and an associated gain of 14 dB at 2.4 GHz.

Original languageEnglish
Pages (from-to)1555-1558
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - 06 2003
Externally publishedYes


  • Doped-channel FET
  • Power performance
  • Reactive ion etching
  • Submicron


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