Abstract
This study aims to investigate the super Nernstian pH sensitivity of Ce2-xSrx(Zr0.53Ti0.47)Oy (CSZT) electrolyte-insulator-semiconductor (EIS) sensors with excess cerium content as a novel solid state device which can be used for detection of pH. We employed the X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and field-emission transmission electron microscopy to characterize the structural, morphological, chemical, and microstructural features, respectively, of these films as a function of the growth condition (strontium doping concentrations varied from 0, 5, 10, and 15%). The CSZT EIS device treated at the 10 mol% Sr condition exhibited the highest sensitivity of 93.15 mV/pH, the lowest hysteresis voltage of 1 mV, and the smallest drift rate of 0.32 mV/h among these conditions. This result may be attributed to the optimal Sr content in the CSZT creating a high content of Ce3+ ions, producing a higher surface roughness and forming the neutral oxygen vacancies.
| Original language | English |
|---|---|
| Pages (from-to) | 133-143 |
| Number of pages | 11 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 274 |
| DOIs | |
| State | Published - 20 11 2018 |
Bibliographical note
Publisher Copyright:© 2018 Elsevier B.V.
Keywords
- CeSr(ZrTi)O (CSZT)
- Excess cerium
- electrolyte–insulator–semiconductor (EIS)
- pH sensor
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