Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

Kuan Kan Hu; Ruey Dar Chang; Wei Yen Woon

doi:10.1063/1.4934674

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

Kuan Kan Hu, Ruey Dar Chang, Wei Yen Woon

Department of Electronic Engineering

National Central University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

Original language	English
Article number	107128
Journal	AIP Advances
Volume	5
Issue number	10
DOIs	https://doi.org/10.1063/1.4934674
State	Published - 01 10 2015

Bibliographical note

Publisher Copyright:
ï¿½ 2015 Author(s).

Access to Document

10.1063/1.4934674

Cite this

@article{03733e0ef01b40cc93d8dfcdcd15ad61,

title = "Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation",

abstract = "We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.",

author = "Hu, {Kuan Kan} and Chang, {Ruey Dar} and Woon, {Wei Yen}",

note = "Publisher Copyright: {\"i}¿½ 2015 Author(s).",

year = "2015",

month = oct,

day = "1",

doi = "10.1063/1.4934674",

language = "英语",

volume = "5",

journal = "AIP Advances",

issn = "2158-3226",

number = "10",

}

TY - JOUR

T1 - Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

AU - Hu, Kuan Kan

AU - Chang, Ruey Dar

AU - Woon, Wei Yen

PY - 2015/10/1

Y1 - 2015/10/1

N2 - We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

AB - We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

UR - http://www.scopus.com/inward/record.url?scp=84945288450&partnerID=8YFLogxK

U2 - 10.1063/1.4934674

DO - 10.1063/1.4934674

M3 - 文章

AN - SCOPUS:84945288450

SN - 2158-3226

VL - 5

JO - AIP Advances

JF - AIP Advances

IS - 10

M1 - 107128

ER -

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this