Surface morphology and photoluminescence of InAs quantum dots grown on [11̄0]-Oriented streaked islands under ultra-low V/III ratio

Shiang Feng Tang; Shih Yen Lin; San Te Yang; Cheng Der Chiang; Ya Tung Cherng; Hui Tang Shen; Tzer En Nee; Ray Ming Lin; Min Yu Hsu

doi:10.1109/TNANO.2004.828534

Surface morphology and photoluminescence of InAs quantum dots grown on [11̄0]-Oriented streaked islands under ultra-low V/III ratio

Shiang Feng Tang^*, Shih Yen Lin, San Te Yang, Cheng Der Chiang, Ya Tung Cherng, Hui Tang Shen, Tzer En Nee, Ray Ming Lin, Min Yu Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

The influences of the low V/III ratio on the surface morphologies and temperature-dependent photoluminescence spectrum of InAs-GaAs quantum dots (QDs) prepared by organometallic vapor phase epitaxy are investigated. Due to the accumulation of In adatoms at the multiatomic step edge on (001) 2° off toward an (111) n-type GaAs substrate, InAs island growth with ∼1 ML coverage takes place prior to the InAs QD formation. With increasing InAs coverage, self-assembled InAs QDs are observed near the InAs islands, which is attributed to the recapture of desorbed In atoms nucleating with supplied As atoms on the edge along [110]-orientation of the GaAs substrate.

Original language	English
Pages (from-to)	275-280
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	3
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2004.828534
State	Published - 06 2004

Keywords

InAs quantum dot (QD)
Organometallic vapor phase epitaxy (OMVPE), photoluminescence (PL)

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10.1109/TNANO.2004.828534

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@article{b41a5a55a4954f49b5754d902dc1e707,

title = "Surface morphology and photoluminescence of InAs quantum dots grown on [1{\=1}0]-Oriented streaked islands under ultra-low V/III ratio",

abstract = "The influences of the low V/III ratio on the surface morphologies and temperature-dependent photoluminescence spectrum of InAs-GaAs quantum dots (QDs) prepared by organometallic vapor phase epitaxy are investigated. Due to the accumulation of In adatoms at the multiatomic step edge on (001) 2° off toward an (111) n-type GaAs substrate, InAs island growth with ∼1 ML coverage takes place prior to the InAs QD formation. With increasing InAs coverage, self-assembled InAs QDs are observed near the InAs islands, which is attributed to the recapture of desorbed In atoms nucleating with supplied As atoms on the edge along [110]-orientation of the GaAs substrate.",

keywords = "InAs quantum dot (QD), Organometallic vapor phase epitaxy (OMVPE), photoluminescence (PL)",

author = "Tang, \{Shiang Feng\} and Lin, \{Shih Yen\} and Yang, \{San Te\} and Chiang, \{Cheng Der\} and Cherng, \{Ya Tung\} and Shen, \{Hui Tang\} and Nee, \{Tzer En\} and Lin, \{Ray Ming\} and Hsu, \{Min Yu\}",

year = "2004",

month = jun,

doi = "10.1109/TNANO.2004.828534",

language = "英语",

volume = "3",

pages = "275--280",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Surface morphology and photoluminescence of InAs quantum dots grown on [11̄0]-Oriented streaked islands under ultra-low V/III ratio

AU - Tang, Shiang Feng

AU - Lin, Shih Yen

AU - Yang, San Te

AU - Chiang, Cheng Der

AU - Cherng, Ya Tung

AU - Shen, Hui Tang

AU - Nee, Tzer En

AU - Lin, Ray Ming

AU - Hsu, Min Yu

PY - 2004/6

Y1 - 2004/6

N2 - The influences of the low V/III ratio on the surface morphologies and temperature-dependent photoluminescence spectrum of InAs-GaAs quantum dots (QDs) prepared by organometallic vapor phase epitaxy are investigated. Due to the accumulation of In adatoms at the multiatomic step edge on (001) 2° off toward an (111) n-type GaAs substrate, InAs island growth with ∼1 ML coverage takes place prior to the InAs QD formation. With increasing InAs coverage, self-assembled InAs QDs are observed near the InAs islands, which is attributed to the recapture of desorbed In atoms nucleating with supplied As atoms on the edge along [110]-orientation of the GaAs substrate.

AB - The influences of the low V/III ratio on the surface morphologies and temperature-dependent photoluminescence spectrum of InAs-GaAs quantum dots (QDs) prepared by organometallic vapor phase epitaxy are investigated. Due to the accumulation of In adatoms at the multiatomic step edge on (001) 2° off toward an (111) n-type GaAs substrate, InAs island growth with ∼1 ML coverage takes place prior to the InAs QD formation. With increasing InAs coverage, self-assembled InAs QDs are observed near the InAs islands, which is attributed to the recapture of desorbed In atoms nucleating with supplied As atoms on the edge along [110]-orientation of the GaAs substrate.

KW - InAs quantum dot (QD)

KW - Organometallic vapor phase epitaxy (OMVPE), photoluminescence (PL)

UR - https://www.scopus.com/pages/publications/2942748435

U2 - 10.1109/TNANO.2004.828534

DO - 10.1109/TNANO.2004.828534

M3 - 文章

AN - SCOPUS:2942748435

SN - 1536-125X

VL - 3

SP - 275

EP - 280

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

ER -

Surface morphology and photoluminescence of InAs quantum dots grown on [11̄0]-Oriented streaked islands under ultra-low V/III ratio

Abstract

Keywords

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