Surface passivation of efficient nanotextured black silicon solar cells using thermal atomic layer deposition

Wei Cheng Wang, Che Wei Lin, Hsin Jui Chen, Che Wei Chang, Jhih Jie Huang, Ming Jui Yang, Budi Tjahjono, Jian Jia Huang, Wen Ching Hsu, Miin Jang Chen*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

104 Scopus citations

Abstract

Efficient nanotextured black silicon solar cells passivated by an Al 2O3 layer are demonstrated. The broadband antireflection of the nanotextured black silicon solar cells was provided by fabricating vertically aligned silicon nanowire (SiNW) arrays on the n+ emitter. A highly conformal Al2O3 layer was deposited upon the SiNW arrays by the thermal atomic layer deposition (ALD) based on the multiple pulses scheme. The nanotextured black silicon wafer covered with the Al 2O3 layer exhibited a low total reflectance of ∼1.5% in a broad spectrum from 400 to 800 nm. The Al2O3 passivation layer also contributes to the suppressed surface recombination, which was explored in terms of the chemical and field-effect passivation effects. An 8% increment of short-circuit current density and 10.3% enhancement of efficiency were achieved due to the ALD Al2O3 surface passivation and forming gas annealing. A high efficiency up to 18.2% was realized in the ALD Al2O3-passivated nanotextured black silicon solar cells.

Original languageEnglish
Pages (from-to)9752-9759
Number of pages8
JournalACS Applied Materials and Interfaces
Volume5
Issue number19
DOIs
StatePublished - 09 10 2013
Externally publishedYes

Keywords

  • atomic layer deposition
  • nanotextured black silicon
  • silicon nanowire
  • solar cell
  • surface passivation

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