Surface passivation using P2S5/(NH4)2Sx and hydrogen fluoride solutions on Ag/n-InAs and Ag/n-InSb Schottky diodes

Ming Jer Jeng; Hung Tsung Wang; Liann Be Chang; Ray Ming Lin

doi:10.1143/jjap.40.562

Surface passivation using P₂S₅/(NH₄)₂S_x and hydrogen fluoride solutions on Ag/n-InAs and Ag/n-InSb Schottky diodes

Ming Jer Jeng^*
, Hung Tsung Wang
, Liann Be Chang
, Ray Ming Lin

^*Corresponding author for this work

Department of Electronic Engineering

St. John's University Taiwan
National Defense University Taiwan

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

A method for surface passivation using both phosphorus sulphide/ammonia sulphide [P₂S₅/(NH₄)₂S_x] and hydrogen fluoride (HF) solutions has shown great effectiveness for the reduction of InAs and InSb substrate surface oxides. In comparison with samples treated by P₂S₅/ (NH₄)₂S_x or HF solutions alone, the surface layer produced by the new passivation treatment has a high stability against oxidation even after an 18 h baking treatment at a temperature of 300°C in N₂ ambient. In addition, the barrier heights of Ag/n-InAs and Ag/n-InSb Schottky diodes can still reach as high as 0.37 and 0.19 eV, respectively, even though the Ag/n-InAs and Ag/n-InSb diodes were baked for 18 h at 300°C.

Original language	English
Pages (from-to)	562-564
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	2 A
DOIs	https://doi.org/10.1143/jjap.40.562
State	Published - 02 2001

Keywords

Hydrogen fluoride
InAs and InSb diodes
Phosphorus sulphide/ammonia sulphide
Schottky barrier height
Surface passivation

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10.1143/jjap.40.562

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title = "Surface passivation using P2S5/(NH4)2Sx and hydrogen fluoride solutions on Ag/n-InAs and Ag/n-InSb Schottky diodes",

abstract = "A method for surface passivation using both phosphorus sulphide/ammonia sulphide [P2S5/(NH4)2Sx] and hydrogen fluoride (HF) solutions has shown great effectiveness for the reduction of InAs and InSb substrate surface oxides. In comparison with samples treated by P2S5/ (NH4)2Sx or HF solutions alone, the surface layer produced by the new passivation treatment has a high stability against oxidation even after an 18 h baking treatment at a temperature of 300°C in N2 ambient. In addition, the barrier heights of Ag/n-InAs and Ag/n-InSb Schottky diodes can still reach as high as 0.37 and 0.19 eV, respectively, even though the Ag/n-InAs and Ag/n-InSb diodes were baked for 18 h at 300°C.",

keywords = "Hydrogen fluoride, InAs and InSb diodes, Phosphorus sulphide/ammonia sulphide, Schottky barrier height, Surface passivation",

author = "Jeng, \{Ming Jer\} and Wang, \{Hung Tsung\} and Chang, \{Liann Be\} and Lin, \{Ray Ming\}",

year = "2001",

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doi = "10.1143/jjap.40.562",

language = "英语",

volume = "40",

pages = "562--564",

journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Surface passivation using P2S5/(NH4)2Sx and hydrogen fluoride solutions on Ag/n-InAs and Ag/n-InSb Schottky diodes

AU - Jeng, Ming Jer

AU - Wang, Hung Tsung

AU - Chang, Liann Be

AU - Lin, Ray Ming

PY - 2001/2

Y1 - 2001/2

N2 - A method for surface passivation using both phosphorus sulphide/ammonia sulphide [P2S5/(NH4)2Sx] and hydrogen fluoride (HF) solutions has shown great effectiveness for the reduction of InAs and InSb substrate surface oxides. In comparison with samples treated by P2S5/ (NH4)2Sx or HF solutions alone, the surface layer produced by the new passivation treatment has a high stability against oxidation even after an 18 h baking treatment at a temperature of 300°C in N2 ambient. In addition, the barrier heights of Ag/n-InAs and Ag/n-InSb Schottky diodes can still reach as high as 0.37 and 0.19 eV, respectively, even though the Ag/n-InAs and Ag/n-InSb diodes were baked for 18 h at 300°C.

AB - A method for surface passivation using both phosphorus sulphide/ammonia sulphide [P2S5/(NH4)2Sx] and hydrogen fluoride (HF) solutions has shown great effectiveness for the reduction of InAs and InSb substrate surface oxides. In comparison with samples treated by P2S5/ (NH4)2Sx or HF solutions alone, the surface layer produced by the new passivation treatment has a high stability against oxidation even after an 18 h baking treatment at a temperature of 300°C in N2 ambient. In addition, the barrier heights of Ag/n-InAs and Ag/n-InSb Schottky diodes can still reach as high as 0.37 and 0.19 eV, respectively, even though the Ag/n-InAs and Ag/n-InSb diodes were baked for 18 h at 300°C.

KW - Hydrogen fluoride

KW - InAs and InSb diodes

KW - Phosphorus sulphide/ammonia sulphide

KW - Schottky barrier height

KW - Surface passivation

UR - https://www.scopus.com/pages/publications/0035246306

U2 - 10.1143/jjap.40.562

DO - 10.1143/jjap.40.562

M3 - 文章

AN - SCOPUS:0035246306

SN - 0021-4922

VL - 40

SP - 562

EP - 564

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 A

ER -

Surface passivation using P₂S₅/(NH₄)₂S_x and hydrogen fluoride solutions on Ag/n-InAs and Ag/n-InSb Schottky diodes

Abstract

Keywords

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