Surface potential redistribution in laterally diffused field effect transistors

Hsueh Chun Liao; Yeh Wei Wu; Ruey Dar Chang; Jung Ruey Tsai

doi:10.1109/ISNE.2013.6512287

Surface potential redistribution in laterally diffused field effect transistors

Hsueh Chun Liao, Yeh Wei Wu, Ruey Dar Chang, Jung Ruey Tsai

Department of Electronic Engineering

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

Device simulation was performed to investigate the redistribution of surface potential in high-voltage lateral diffused metal-oxide-semiconductor field effect transistors. When the high electric field in the extended drift region causes quasi-saturation effect, the surface potential near the drift region is reduced with the increase of the inversion carries. A model was proposed to describe the potential redistribution based on the reduction of the depletion region in the junction between the channel and drift region.

Original language	English
Pages	62-64
Number of pages	3
DOIs	https://doi.org/10.1109/ISNE.2013.6512287
State	Published - 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 25 02 2013 → 26 02 2013

Conference

Conference	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	25/02/13 → 26/02/13

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10.1109/ISNE.2013.6512287

Cite this

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title = "Surface potential redistribution in laterally diffused field effect transistors",

abstract = "Device simulation was performed to investigate the redistribution of surface potential in high-voltage lateral diffused metal-oxide-semiconductor field effect transistors. When the high electric field in the extended drift region causes quasi-saturation effect, the surface potential near the drift region is reduced with the increase of the inversion carries. A model was proposed to describe the potential redistribution based on the reduction of the depletion region in the junction between the channel and drift region.",

author = "Liao, \{Hsueh Chun\} and Wu, \{Yeh Wei\} and Chang, \{Ruey Dar\} and Tsai, \{Jung Ruey\}",

year = "2013",

doi = "10.1109/ISNE.2013.6512287",

language = "英语",

pages = "62--64",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

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T1 - Surface potential redistribution in laterally diffused field effect transistors

AU - Liao, Hsueh Chun

AU - Wu, Yeh Wei

AU - Chang, Ruey Dar

AU - Tsai, Jung Ruey

PY - 2013

Y1 - 2013

N2 - Device simulation was performed to investigate the redistribution of surface potential in high-voltage lateral diffused metal-oxide-semiconductor field effect transistors. When the high electric field in the extended drift region causes quasi-saturation effect, the surface potential near the drift region is reduced with the increase of the inversion carries. A model was proposed to describe the potential redistribution based on the reduction of the depletion region in the junction between the channel and drift region.

AB - Device simulation was performed to investigate the redistribution of surface potential in high-voltage lateral diffused metal-oxide-semiconductor field effect transistors. When the high electric field in the extended drift region causes quasi-saturation effect, the surface potential near the drift region is reduced with the increase of the inversion carries. A model was proposed to describe the potential redistribution based on the reduction of the depletion region in the junction between the channel and drift region.

UR - https://www.scopus.com/pages/publications/84877939208

U2 - 10.1109/ISNE.2013.6512287

DO - 10.1109/ISNE.2013.6512287

M3 - 论文

AN - SCOPUS:84877939208

SP - 62

EP - 64

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Surface potential redistribution in laterally diffused field effect transistors

Abstract

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