Switching behavior in rare-earth films fabricated in full room temperature

Tung Ming Pan; Chih Hung Lu

doi:10.1109/TED.2012.2182676

Switching behavior in rare-earth films fabricated in full room temperature

Tung Ming Pan^*, Chih Hung Lu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

22 Scopus citations

Abstract

In this paper, we investigated the forming-free resistive-switching (RS) behavior in the Ru/REO _x/TaN (RE = Ce, Pr, Sm, and Eu) memory device using CeO _x, PrO _x, SmO _x, and EuO _x thin films fabricated in a full-room-temperature process. The dominant conduction mechanism of Ru/REO _x/TaN memory devices in the low-resistance state is ohmic behavior, whereas the high-resistance state is space-charge-limited conduction. The Ru/CeO _x/TaN devices show a high resistance ratio of > 10 ⁴, reliable data retention for 10 ⁵ s, and stable endurance characteristics for up to 1000 cycles. This result suggests the high concentration of the cerium ions and the low density of chemical defects (oxygen vacancies) in the CeO _x film. The Ru/CeO _x/TaN structure memory is a very promising candidate for future nonvolatile RS memory applications.

Original language	English
Article number	6145746
Pages (from-to)	956-961
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	4
DOIs	https://doi.org/10.1109/TED.2012.2182676
State	Published - 04 2012

Keywords

CeO
EuO
PrO
SmO
forming free
rare-earth (RE)
resistive-switching (RS)

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10.1109/TED.2012.2182676

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title = "Switching behavior in rare-earth films fabricated in full room temperature",

abstract = "In this paper, we investigated the forming-free resistive-switching (RS) behavior in the Ru/REO x/TaN (RE = Ce, Pr, Sm, and Eu) memory device using CeO x, PrO x, SmO x, and EuO x thin films fabricated in a full-room-temperature process. The dominant conduction mechanism of Ru/REO x/TaN memory devices in the low-resistance state is ohmic behavior, whereas the high-resistance state is space-charge-limited conduction. The Ru/CeO x/TaN devices show a high resistance ratio of > 10 4, reliable data retention for 10 5 s, and stable endurance characteristics for up to 1000 cycles. This result suggests the high concentration of the cerium ions and the low density of chemical defects (oxygen vacancies) in the CeO x film. The Ru/CeO x/TaN structure memory is a very promising candidate for future nonvolatile RS memory applications.",

keywords = "CeO, EuO, PrO, SmO, forming free, rare-earth (RE), resistive-switching (RS)",

author = "Pan, {Tung Ming} and Lu, {Chih Hung}",

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doi = "10.1109/TED.2012.2182676",

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AU - Lu, Chih Hung

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AB - In this paper, we investigated the forming-free resistive-switching (RS) behavior in the Ru/REO x/TaN (RE = Ce, Pr, Sm, and Eu) memory device using CeO x, PrO x, SmO x, and EuO x thin films fabricated in a full-room-temperature process. The dominant conduction mechanism of Ru/REO x/TaN memory devices in the low-resistance state is ohmic behavior, whereas the high-resistance state is space-charge-limited conduction. The Ru/CeO x/TaN devices show a high resistance ratio of > 10 4, reliable data retention for 10 5 s, and stable endurance characteristics for up to 1000 cycles. This result suggests the high concentration of the cerium ions and the low density of chemical defects (oxygen vacancies) in the CeO x film. The Ru/CeO x/TaN structure memory is a very promising candidate for future nonvolatile RS memory applications.

KW - CeO

KW - EuO

KW - PrO

KW - SmO

KW - forming free

KW - rare-earth (RE)

KW - resistive-switching (RS)

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ER -

Switching behavior in rare-earth films fabricated in full room temperature

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Keywords

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