Systematic direct parameter extraction with substrate network of SiGe HBT

T. Hui Teo*, Yong Zhong Xiong, Jeffrey Shiang Fu, Huailin Liao, Jinglin Shi, Mingbin Yu, Weihong Li

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

10 Scopus citations

Abstract

A systematic approach to directly extract the equivalent circuit of the heterojunction bipolar transistor (HBT) including the substrate network is developed. All parameters are extracted from the measured S-parameters. The substrate network is accurately extracted by measuring the collector port Equivalent circuit without substrate effects can be extracted by systematically analyzing and solving the two-port network equations. This technique is validated with fabricated devices in Silicon Germanium (SiGe) technology from 50MHz to 26.05GHz. The extracted results are in excellent agreement with the measured results.

Original languageEnglish
Pages603-606
Number of pages4
StatePublished - 2004
Externally publishedYes
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: 06 06 200408 06 2004

Conference

ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/TerritoryUnited States
CityFort Worth, TX
Period06/06/0408/06/04

Keywords

  • Direct extraction
  • Equivalent circuit
  • Heterojunction bipolar transistor
  • Silicon germanium
  • Substrate network

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