Systematic direct parameter extraction with substrate network of SiGe HBT

T. Hui Teo; Yong Zhong Xiong; Jeffrey Shiang Fu; Huailin Liao; Jinglin Shi; Mingbin Yu; Weihong Li

Systematic direct parameter extraction with substrate network of SiGe HBT

T. Hui Teo^*
, Yong Zhong Xiong
, Jeffrey Shiang Fu
, Huailin Liao
, Jinglin Shi
, Mingbin Yu
, Weihong Li

^*Corresponding author for this work

Agency for Science, Technology and Research, Singapore
Nanyang Technological University

Research output: Contribution to conference › Conference Paper › peer-review

11 Scopus citations

Abstract

A systematic approach to directly extract the equivalent circuit of the heterojunction bipolar transistor (HBT) including the substrate network is developed. All parameters are extracted from the measured S-parameters. The substrate network is accurately extracted by measuring the collector port Equivalent circuit without substrate effects can be extracted by systematically analyzing and solving the two-port network equations. This technique is validated with fabricated devices in Silicon Germanium (SiGe) technology from 50MHz to 26.05GHz. The extracted results are in excellent agreement with the measured results.

Original language	English
Pages	603-606
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States Duration: 06 06 2004 → 08 06 2004

Conference

Conference	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Fort Worth, TX
Period	06/06/04 → 08/06/04

Keywords

Direct extraction
Equivalent circuit
Heterojunction bipolar transistor
Silicon germanium
Substrate network

Cite this

@conference{e32a3999b9d249f194c5e598f0472ebb,

title = "Systematic direct parameter extraction with substrate network of SiGe HBT",

abstract = "A systematic approach to directly extract the equivalent circuit of the heterojunction bipolar transistor (HBT) including the substrate network is developed. All parameters are extracted from the measured S-parameters. The substrate network is accurately extracted by measuring the collector port Equivalent circuit without substrate effects can be extracted by systematically analyzing and solving the two-port network equations. This technique is validated with fabricated devices in Silicon Germanium (SiGe) technology from 50MHz to 26.05GHz. The extracted results are in excellent agreement with the measured results.",

keywords = "Direct extraction, Equivalent circuit, Heterojunction bipolar transistor, Silicon germanium, Substrate network",

author = "Teo, \{T. Hui\} and Xiong, \{Yong Zhong\} and Fu, \{Jeffrey Shiang\} and Huailin Liao and Jinglin Shi and Mingbin Yu and Weihong Li",

year = "2004",

language = "英语",

pages = "603--606",

note = "Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 06-06-2004 Through 08-06-2004",

}

TY - CONF

T1 - Systematic direct parameter extraction with substrate network of SiGe HBT

AU - Teo, T. Hui

AU - Xiong, Yong Zhong

AU - Fu, Jeffrey Shiang

AU - Liao, Huailin

AU - Shi, Jinglin

AU - Yu, Mingbin

AU - Li, Weihong

PY - 2004

Y1 - 2004

N2 - A systematic approach to directly extract the equivalent circuit of the heterojunction bipolar transistor (HBT) including the substrate network is developed. All parameters are extracted from the measured S-parameters. The substrate network is accurately extracted by measuring the collector port Equivalent circuit without substrate effects can be extracted by systematically analyzing and solving the two-port network equations. This technique is validated with fabricated devices in Silicon Germanium (SiGe) technology from 50MHz to 26.05GHz. The extracted results are in excellent agreement with the measured results.

AB - A systematic approach to directly extract the equivalent circuit of the heterojunction bipolar transistor (HBT) including the substrate network is developed. All parameters are extracted from the measured S-parameters. The substrate network is accurately extracted by measuring the collector port Equivalent circuit without substrate effects can be extracted by systematically analyzing and solving the two-port network equations. This technique is validated with fabricated devices in Silicon Germanium (SiGe) technology from 50MHz to 26.05GHz. The extracted results are in excellent agreement with the measured results.

KW - Direct extraction

KW - Equivalent circuit

KW - Heterojunction bipolar transistor

KW - Silicon germanium

KW - Substrate network

UR - https://www.scopus.com/pages/publications/4444349495

M3 - 论文

AN - SCOPUS:4444349495

SP - 603

EP - 606

T2 - Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 6 June 2004 through 8 June 2004

ER -

Systematic direct parameter extraction with substrate network of SiGe HBT

Abstract

Conference

Keywords

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