Systematic root cause analysis for GaP green light LED degradation

Cher Ming Tan*, Chao Sung Lai

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

High-brightness light-emitting diodes (LEDs) are now commonly employed in many applications. In order to ensure long-term applications with insignificant degradation, the root cause analysis of their degradation is important. While failure analysis of failed LEDs can usually be traced with observable defects, the defects that cause LEDs to degrade are generally less obvious. In this paper, we present a systematic method to identify the root cause of green GaP LED degradation. The various steps in the procedure from nondestructive to destructive analysis are described, and the root cause is found to be the excessive doping of zinc in the p-layer.

Original languageEnglish
Article number6332492
Pages (from-to)156-160
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume13
Issue number1
DOIs
StatePublished - 2013

Keywords

  • Green LED
  • SIMS analysis
  • red light emission
  • zinc overdoping
  • zinc oxide formation

Fingerprint

Dive into the research topics of 'Systematic root cause analysis for GaP green light LED degradation'. Together they form a unique fingerprint.

Cite this