@inproceedings{a90bb26139934db3be85d12e904c8fd6,
title = "Taper angle of silicon nitride thin film control by laser direct pattern for transistors fabrication",
abstract = "Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 μm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.",
keywords = "Laser direct patterning, Silicon nitride (SiNx), Taper angle, Thin-film transistor (TFT)",
author = "Chen, {Chao Nan} and Huang, {Jung Jie} and Wu, {Gwo Mei} and Chien, {How Wen}",
year = "2013",
doi = "10.4028/www.scientific.net/AMM.284-287.225",
language = "英语",
isbn = "9783037856123",
series = "Applied Mechanics and Materials",
pages = "225--229",
booktitle = "Innovation for Applied Science and Technology",
note = "2nd International Conference on Engineering and Technology Innovation 2012, ICETI 2012 ; Conference date: 02-11-2012 Through 06-11-2012",
}