Temperature-dependence of noise figure of monolithic RF transformers on a thin (20μm) silicon substrate

Yo Sheng Lin; Hsiao Bin Liang; Tao Wang; Shey Shi Lu

doi:10.1109/LED.2005.843214

Temperature-dependence of noise figure of monolithic RF transformers on a thin (20μm) silicon substrate

Yo Sheng Lin^*
, Hsiao Bin Liang
, Tao Wang
, Shey Shi Lu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

In this letter, we demonstrate an analysis of the effect of temperature (from -45 °C to 175 °C) on the quality factor (Q-factor) and noise figure (NF) performances of monolithic RF transformers on both normal (700 μm) and thin (20 μm) silicon substrates. The results show a 36% reduction in minimum NF (NF_min) at 5 GHz and a 40.9% increase in maximum Q-factor (Q_max) if the silicon substrate is thinned down from 700 to 20μm, which means the silicon substrate thinning is effective in improving the Q-factor and NF performances of transformers. The present analysis is helpful for RF engineers to design less temperature-sensitive low-voltage supply transformer-feedback low-noise amplifiers and voltage-controlled-oscillators, and other radio-frequency integrated circuits which include transformers.

Original language	English
Pages (from-to)	208-211
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/LED.2005.843214
State	Published - 03 2005
Externally published	Yes

Keywords

Monolithic transformer
Noise figure (NF)
Radio frequency (RF)
Temperature
Thin silicon substrate

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10.1109/LED.2005.843214

Cite this

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title = "Temperature-dependence of noise figure of monolithic RF transformers on a thin (20μm) silicon substrate",

abstract = "In this letter, we demonstrate an analysis of the effect of temperature (from -45 °C to 175 °C) on the quality factor (Q-factor) and noise figure (NF) performances of monolithic RF transformers on both normal (700 μm) and thin (20 μm) silicon substrates. The results show a 36\% reduction in minimum NF (NFmin) at 5 GHz and a 40.9\% increase in maximum Q-factor (Qmax) if the silicon substrate is thinned down from 700 to 20μm, which means the silicon substrate thinning is effective in improving the Q-factor and NF performances of transformers. The present analysis is helpful for RF engineers to design less temperature-sensitive low-voltage supply transformer-feedback low-noise amplifiers and voltage-controlled-oscillators, and other radio-frequency integrated circuits which include transformers.",

keywords = "Monolithic transformer, Noise figure (NF), Radio frequency (RF), Temperature, Thin silicon substrate",

author = "Lin, \{Yo Sheng\} and Liang, \{Hsiao Bin\} and Tao Wang and Lu, \{Shey Shi\}",

year = "2005",

month = mar,

doi = "10.1109/LED.2005.843214",

language = "英语",

volume = "26",

pages = "208--211",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Temperature-dependence of noise figure of monolithic RF transformers on a thin (20μm) silicon substrate

AU - Lin, Yo Sheng

AU - Liang, Hsiao Bin

AU - Wang, Tao

AU - Lu, Shey Shi

PY - 2005/3

Y1 - 2005/3

N2 - In this letter, we demonstrate an analysis of the effect of temperature (from -45 °C to 175 °C) on the quality factor (Q-factor) and noise figure (NF) performances of monolithic RF transformers on both normal (700 μm) and thin (20 μm) silicon substrates. The results show a 36% reduction in minimum NF (NFmin) at 5 GHz and a 40.9% increase in maximum Q-factor (Qmax) if the silicon substrate is thinned down from 700 to 20μm, which means the silicon substrate thinning is effective in improving the Q-factor and NF performances of transformers. The present analysis is helpful for RF engineers to design less temperature-sensitive low-voltage supply transformer-feedback low-noise amplifiers and voltage-controlled-oscillators, and other radio-frequency integrated circuits which include transformers.

AB - In this letter, we demonstrate an analysis of the effect of temperature (from -45 °C to 175 °C) on the quality factor (Q-factor) and noise figure (NF) performances of monolithic RF transformers on both normal (700 μm) and thin (20 μm) silicon substrates. The results show a 36% reduction in minimum NF (NFmin) at 5 GHz and a 40.9% increase in maximum Q-factor (Qmax) if the silicon substrate is thinned down from 700 to 20μm, which means the silicon substrate thinning is effective in improving the Q-factor and NF performances of transformers. The present analysis is helpful for RF engineers to design less temperature-sensitive low-voltage supply transformer-feedback low-noise amplifiers and voltage-controlled-oscillators, and other radio-frequency integrated circuits which include transformers.

KW - Monolithic transformer

KW - Noise figure (NF)

KW - Radio frequency (RF)

KW - Temperature

KW - Thin silicon substrate

UR - https://www.scopus.com/pages/publications/15544372496

U2 - 10.1109/LED.2005.843214

DO - 10.1109/LED.2005.843214

M3 - 文章

AN - SCOPUS:15544372496

SN - 0741-3106

VL - 26

SP - 208

EP - 211

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Temperature-dependence of noise figure of monolithic RF transformers on a thin (20μm) silicon substrate

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Keywords

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