Temperature dependence of photoreflectance in InAs/GaAs quantum dots

C. M. Lai; F. Y. Chang; C. W. Chang; C. H. Kao; H. H. Lin; G. J. Jan; Johnson Lee

doi:10.1063/1.1581003

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

C. M. Lai^*, F. Y. Chang, C. W. Chang, C. H. Kao, H. H. Lin, G. J. Jan, Johnson Lee

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

18 Scopus citations

Abstract

A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.

Original language	English
Pages (from-to)	3895-3897
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	22
DOIs	https://doi.org/10.1063/1.1581003
State	Published - 02 06 2003
Externally published	Yes

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title = "Temperature dependence of photoreflectance in InAs/GaAs quantum dots",

abstract = "A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.",

author = "Lai, {C. M.} and Chang, {F. Y.} and Chang, {C. W.} and Kao, {C. H.} and Lin, {H. H.} and Jan, {G. J.} and Johnson Lee",

year = "2003",

month = jun,

day = "2",

doi = "10.1063/1.1581003",

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volume = "82",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Lai, C. M.

AU - Chang, F. Y.

AU - Chang, C. W.

AU - Kao, C. H.

AU - Lin, H. H.

AU - Jan, G. J.

AU - Lee, Johnson

PY - 2003/6/2

Y1 - 2003/6/2

N2 - A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.

AB - A study was performed on the temperature dependence of photoreflectance in InAs/GaAs quantum dots. Transition energies of four excited states and ground state with equal interlevel spacings were observed. It was found that the linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K.

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U2 - 10.1063/1.1581003

DO - 10.1063/1.1581003

M3 - 文章

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SN - 0003-6951

VL - 82

SP - 3895

EP - 3897

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

Abstract

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