TY - JOUR
T1 - Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
AU - Chakrabarti, Somsubhra
AU - Samanta, Subhranu
AU - Maikap, Siddheswar
AU - Rahaman, Sheikh Ziaur
AU - Cheng, Hsin Ming
N1 - Publisher Copyright:
© 2016, The Author(s).
PY - 2016/12/1
Y1 - 2016/12/1
N2 - Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO3/WOx/W structure have been investigated for the first time. Transmission electron microscope image shows a polycrystalline WO3/WOx layer in a device with a size of 150 × 150 nm2. The composition of WO3/WOx is confirmed by X-ray photo-electron spectroscopy. Non-linear bipolar resistive switching characteristics have been simulated using space-charge limited current (SCLC) conduction at low voltage, F-N tunneling at higher voltage regions, and hopping conduction during reset, which is well fitted with experimental current-voltage characteristics. The barrier height at the WOx/W interface for the devices annealed at 500 °C is lower than those of the as-deposited and annealed at 400 °C (0.63 vs. 1.03 eV). An oxygen-vacant conducting filament with a diameter of ~34 nm is formed/ruptured into the WO3/WOx bilayer owing to oxygen ion migration under external bias as well as barrier height changes for high-resistance to low-resistance states. In addition, the switching mechanism including the easy method has been explored through the current-voltage simulation. The devices annealed at 500 °C have a lower operation voltage, lower barrier height, and higher non-linearity factor, which are beneficial for selector-less crossbar memory arrays.
AB - Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO3/WOx/W structure have been investigated for the first time. Transmission electron microscope image shows a polycrystalline WO3/WOx layer in a device with a size of 150 × 150 nm2. The composition of WO3/WOx is confirmed by X-ray photo-electron spectroscopy. Non-linear bipolar resistive switching characteristics have been simulated using space-charge limited current (SCLC) conduction at low voltage, F-N tunneling at higher voltage regions, and hopping conduction during reset, which is well fitted with experimental current-voltage characteristics. The barrier height at the WOx/W interface for the devices annealed at 500 °C is lower than those of the as-deposited and annealed at 400 °C (0.63 vs. 1.03 eV). An oxygen-vacant conducting filament with a diameter of ~34 nm is formed/ruptured into the WO3/WOx bilayer owing to oxygen ion migration under external bias as well as barrier height changes for high-resistance to low-resistance states. In addition, the switching mechanism including the easy method has been explored through the current-voltage simulation. The devices annealed at 500 °C have a lower operation voltage, lower barrier height, and higher non-linearity factor, which are beneficial for selector-less crossbar memory arrays.
KW - Barrier height
KW - F-N tunneling
KW - Simulation
KW - Temperature
KW - WO switching material
UR - http://www.scopus.com/inward/record.url?scp=84986267168&partnerID=8YFLogxK
U2 - 10.1186/s11671-016-1602-7
DO - 10.1186/s11671-016-1602-7
M3 - 文章
AN - SCOPUS:84986267168
SN - 1931-7573
VL - 11
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 389
ER -