Temperature-dependent optical properties of In0.34 Ga0.66 As1 - x Nx / GaAs single quantum well with high nitrogen content for 1.55 μ m application grown by molecular beam epitaxy

Fang I. Lai, S. Y. Kuo, J. S. Wang, R. S. Hsiao, H. C. Kuo*, J. Chi, S. C. Wang, H. S. Wang, C. T. Liang, Y. F. Chen

*Corresponding author for this work

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