Ternary AgInSe 2 film electrode created using selenization of RF magnetron sputtered Ag-In metal precursor for photoelectrochemical applications

Kong Wei Cheng*, Chao Hsien Yeh

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

24 Scopus citations

Abstract

AgInSe 2 ternary semiconductor thin films are deposited on glass substrates and indium-doped-tin-oxide (ITO)-coated glass substrates using the selenization of magnetron sputtered Ag-In metal precursors. X-ray diffraction (XRD) and energy-dispersive analysis of X-ray (EDAX) results show that the crystal phase of samples changed from AgInSe 2 to a solid mixture of AgInSe 2 and Ag 2Se with a decrease in the [In]/[In + Ag] molar ratio in samples. The direct and indirect energy band gaps of the samples vary in the ranges of 1.27-1.45 eV and 0.91-1.17 eV, respectively, depending on the [In]/[In + Ag] molar ratio in samples. The flat-band potentials of samples are in the range of -0.47 to -0.71 V (vs. normal hydrogen electrode) in a solution containing Na 2S (0.35 M) + K 2SO 3 (0.25 M) obtained using Mott-Schottky measurements. The maximum photocurrent density of the samples on ITO-coated glass substrates is 31.7 mA/cm 2 at an external potential of +1.0 V (vs. Ag/AgCl) in the solution containing Na 2S (0.35 M) + K 2SO 3 (0.25 M) ions. Highlights: AgInSe 2 is deposited on substrates using selenization of Ag-In precursors. The direct energy band gaps of the samples were in the range of 1.27-1.45 eV. Sample with [In]/[Ag + In] ratio of 0.49 has a maximum PEC response.

Original languageEnglish
Pages (from-to)13638-13644
Number of pages7
JournalInternational Journal of Hydrogen Energy
Volume37
Issue number18
DOIs
StatePublished - 09 2012

Keywords

  • AgInSe
  • Chemical conversion
  • Magnetron sputtering
  • Photoelectrode

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