Abstract
The cyclic voltammetry stripping (CVs) behavior of the tin-doped indium oxide (ITO) on SiO2 in 0.3M HCl is reported. The CVs result showed an obvious reduction-current peak that occurred during the first cathodic potential scanning. Smaller reduction current and more negative potential of the reduction-current peak were also observed for the ITO that was annealed at 500 °C. The result was attributed to the replenished oxygen-deficient site and the oxygen anion density is decreased in the ITO. The present study has proved that CVs is a useful method to differentiate the carrier concentration in ITO film controlled by different pretreatments. Many spherical In-Sn particles were formed on the ITO when the reduction current took place. During precipitation of these spherical particles, the grain boundaries of the ITO were dissolved and the ITO surface nearby the grain boundaries offered a preferred nucleation site for the formation of these spherical In-Sn particles. Based on the microstructure observed and the result derived from the short potential range scanning, the formation mechanism of the spherical particle is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 193-199 |
| Number of pages | 7 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 747 |
| State | Published - 2003 |
| Event | Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States Duration: 02 12 2002 → 04 12 2002 |