The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design

Chong Rong Haung; Chia Hao Liu; Hsiang Chun Wang; Hsien Chin Chiu; Chih Tien Chen; Kuo Jen Chang

The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design

Chong Rong Haung, Chia Hao Liu, Hsiang Chun Wang, Hsien Chin Chiu^*, Chih Tien Chen, Kuo Jen Chang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, a 50-nm Al_0.05Ga_0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The I_on/I_offratio of the BB device was 3.43 × 10⁵and the ratio for the device without BB was 1.91 × 10³. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 26.9 GHz and power gain cutoff frequency of 54.7 GHz.

Original language	English
Title of host publication	CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	183-186
Number of pages	4
ISBN (Electronic)	9781893580305
State	Published - 2020
Event	2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 - Tuczon, United States Duration: 11 05 2020 → 14 05 2020

Publication series

Name	CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020
Country/Territory	United States
City	Tuczon
Period	11/05/20 → 14/05/20

Bibliographical note

Publisher Copyright:
© CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.

Keywords

Back barrier (B.B.) layer
Conduction band energy
Current gain (f) and power gain (f)

Cite this

Haung, C. R., Liu, C. H., Wang, H. C., Chiu, H. C., Chen, C. T., & Chang, K. J. (2020). The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design. In CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 183-186). (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Haung, Chong Rong ; Liu, Chia Hao ; Wang, Hsiang Chun et al. / The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design. CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2020. pp. 183-186 (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

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title = "The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design",

abstract = "In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioffratio of the BB device was 3.43 × 105and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 26.9 GHz and power gain cutoff frequency of 54.7 GHz.",

keywords = "Back barrier (B.B.) layer, Conduction band energy, Current gain (f) and power gain (f)",

author = "Haung, {Chong Rong} and Liu, {Chia Hao} and Wang, {Hsiang Chun} and Chiu, {Hsien Chin} and Chen, {Chih Tien} and Chang, {Kuo Jen}",

note = "Publisher Copyright: {\textcopyright} CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.; 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 ; Conference date: 11-05-2020 Through 14-05-2020",

year = "2020",

language = "英语",

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Haung, CR, Liu, CH, Wang, HC, Chiu, HC, Chen, CT & Chang, KJ 2020, The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design. in CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 183-186, 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020, Tuczon, United States, 11/05/20.

The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design. / Haung, Chong Rong; Liu, Chia Hao; Wang, Hsiang Chun et al.
CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2020. p. 183-186 (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Haung, Chong Rong

AU - Liu, Chia Hao

AU - Wang, Hsiang Chun

AU - Chiu, Hsien Chin

AU - Chen, Chih Tien

AU - Chang, Kuo Jen

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N2 - In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioffratio of the BB device was 3.43 × 105and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 26.9 GHz and power gain cutoff frequency of 54.7 GHz.

AB - In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioffratio of the BB device was 3.43 × 105and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 26.9 GHz and power gain cutoff frequency of 54.7 GHz.

KW - Back barrier (B.B.) layer

KW - Conduction band energy

KW - Current gain (f) and power gain (f)

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BT - CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

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Haung CR, Liu CH, Wang HC, Chiu HC, Chen CT, Chang KJ. The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design. In CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2020. p. 183-186. (CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

The characteristics of 6-inch GaN on Si RF HEMT with high isolation composited buffer layer design

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