The characteristics of fluorinated polycrystalline silicon oxides and thin film transistors by CF4 plasma treatment

Chyuan Haur Kao, C. S. Lai, W. H. Sung, C. H. Lee

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

This study describes a simple fluorinating technique by the tetrafluoromethane (CF4) plasma treatment to form fluorinated polyoxides and polycrystalline silicon thin film transistors (TFTs). In comparison with the non-fluorinated device, the fluorinated polyoxides and devices exhibit a higher breakdown field (>8 MV/cm), low charge trapping rates, low off-state current, and low trap states. Furthermore, the performance and reliability of the fluorinated devices are also improved by the CF 4 plasma treatment. This is due to the fact that the incorporated fluorine can break strain bonds to form stronger silicon-fluorine (Si-F) bonds to passivate the generation of interface and trap states existing near the polyoxide/polysilicon interface and grain boundaries.

Original languageEnglish
Pages (from-to)919-922
Number of pages4
JournalThin Solid Films
Volume519
Issue number2
DOIs
StatePublished - 01 11 2010

Keywords

  • Fluorinated polyoxides
  • Plasma treatment
  • Secondary ion mass spectroscopy
  • Thin film transistors

Fingerprint

Dive into the research topics of 'The characteristics of fluorinated polycrystalline silicon oxides and thin film transistors by CF4 plasma treatment'. Together they form a unique fingerprint.

Cite this