The characteristics of platinum diffusion in n-type GaN

Der Hwa Yeh, Li Zen Hsieh, Liann Be Chang, Ming Jer Jeng*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

The electrical and optical characteristics of platinum (Pt) diffusion in n-type gallium nitride (GaN) film are investigated. The diffusion extent was characterized by the SIMS technique. The temperature-dependent diffusion coefficients of Pt in n-GaN are 4.158 × 10 -14 , 1.572 × 10 -13 and 3.216 × 10 -13 cm 2 /s at a temperature of 650, 750 and 850 °C, respectively. The Pt diffusion constant and activation energy in GaN are 6.627 × 10 -9 cm 2 /s and 0.914 eV, respectively. These results indicate that the major diffusion mechanism of Pt in GaN is possibly an interstitial diffusion. In addition, it is also observed that the Pt atom may be a donor because the carrier concentration in Pt-diffused GaN is higher than that in un-diffused GaN. The optical property is studied by temperature-dependent photoluminescence (PL) measurement. The thermal quenching of the PL spectra for Pt-diffused GaN samples is also examined.

Original languageEnglish
Pages (from-to)6910-6914
Number of pages5
JournalApplied Surface Science
Volume253
Issue number16
DOIs
StatePublished - 15 06 2007

Keywords

  • Activation energy
  • Diffusion coefficient
  • GaN
  • PL
  • Platinum diffusion
  • SIMS

Fingerprint

Dive into the research topics of 'The characteristics of platinum diffusion in n-type GaN'. Together they form a unique fingerprint.

Cite this