The characteristics of the high-K Er 2O 3 (erbium oxide) dielectrics deposited on polycrystalline silicon

Chyuan Haur Kao*, Hsiang Chen, Yu Tsung Pan, Jing Sing Chiu, Tien Chang Lu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

38 Scopus citations

Abstract

The high-k Er 2O 3 films deposited on polycrystalline silicon treated with various post-rapid thermal annealing (RTA) temperatures were formed as high k dielectrics. In order to study the annealing effects, electrical measurements, optical characterizations, and multiple material analyses techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) were performed to examine the differences between the samples in various annealing conditions. The annealing temperature at 800 °C was the optimal condition to form a well-crystallized Er 2O 3 film with excellent material quality and electrical properties. RTA annealing at an appropriate annealing temperature of 800 °C might effectively mitigate the dangling bonds and traps and improve electrical and material properties of the dielectric.

Original languageEnglish
Pages (from-to)504-508
Number of pages5
JournalSolid State Communications
Volume152
Issue number6
DOIs
StatePublished - 03 2012

Keywords

  • A. Er O film
  • C. Polycrystalline
  • D. RTA annealing

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