Abstract
The high-k Er 2O 3 films deposited on polycrystalline silicon treated with various post-rapid thermal annealing (RTA) temperatures were formed as high k dielectrics. In order to study the annealing effects, electrical measurements, optical characterizations, and multiple material analyses techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) were performed to examine the differences between the samples in various annealing conditions. The annealing temperature at 800 °C was the optimal condition to form a well-crystallized Er 2O 3 film with excellent material quality and electrical properties. RTA annealing at an appropriate annealing temperature of 800 °C might effectively mitigate the dangling bonds and traps and improve electrical and material properties of the dielectric.
Original language | English |
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Pages (from-to) | 504-508 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 152 |
Issue number | 6 |
DOIs | |
State | Published - 03 2012 |
Keywords
- A. Er O film
- C. Polycrystalline
- D. RTA annealing