The comparison of the high-k Sm₂O₃ and Sm₂ TiO₅ dielectrics deposited on the polycrystalline silicon

In this study, the Ti-doped high- k Sm₂ TiO₅ polyoxide dielectric deposited on poly-Silicon treated with the postrapid thermal annealing (RTA) showed a higher effective dielectric constant, lower leakage current, higher breakdown electric field, smaller gate voltage shift, lower electron trapping rate, and larger Q_bd than those of the high- k Sm₂ O₃ polyoxide dielectric. The high- k Sm₂ Ti O₅ treated with post-RTA at 800°C had the best dielectric performance among all the conditions. Incorporating some Ti content into the Sm₂ O₃ dielectric made noticeable improvements in the electrical performance and material quality. The Sm₂ Ti O₅ dielectric is a very promising high- k dielectric for the future nonvolatile memory applications.