The defect structure of CuInS2. part I: Intrinsic defects

H. Y. Ueng; H. L. Hwang

doi:10.1016/0022-3697(89)90403-4

The defect structure of CuInS₂. part I: Intrinsic defects

H. Y. Ueng^*
, H. L. Hwang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

154 Scopus citations

Abstract

Combining the studies of electrical, photoluminescence and stoichiometric analyses, the defect structure of undoped CuInS₂ is revealed. For a multilevel system such as CuInS₂, the ionization energies were determined to be 0.038, 0.068 and 0.145eV for the sulfur vacancy, indium interstitial and indium occupying the copper vacancy, respectively. A defect model based on deviation from the ideal chemical formula was developed to illustrate the self-compensation effects, in which "quantitative" investigations of the structural defects in undoped CuInS₂ crystals are provided.

Original language	English
Pages (from-to)	1297-1305
Number of pages	9
Journal	Journal of Physics and Chemistry of Solids
Volume	50
Issue number	12
DOIs	https://doi.org/10.1016/0022-3697(89)90403-4
State	Published - 1989
Externally published	Yes

Keywords

CuInS
chemical formula deviations
defect model
intrinsic defects

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10.1016/0022-3697(89)90403-4

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title = "The defect structure of CuInS2. part I: Intrinsic defects",

abstract = "Combining the studies of electrical, photoluminescence and stoichiometric analyses, the defect structure of undoped CuInS2 is revealed. For a multilevel system such as CuInS2, the ionization energies were determined to be 0.038, 0.068 and 0.145eV for the sulfur vacancy, indium interstitial and indium occupying the copper vacancy, respectively. A defect model based on deviation from the ideal chemical formula was developed to illustrate the self-compensation effects, in which {"}quantitative{"} investigations of the structural defects in undoped CuInS2 crystals are provided.",

keywords = "CuInS, chemical formula deviations, defect model, intrinsic defects",

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year = "1989",

doi = "10.1016/0022-3697(89)90403-4",

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TY - JOUR

T1 - The defect structure of CuInS2. part I

T2 - Intrinsic defects

AU - Ueng, H. Y.

AU - Hwang, H. L.

PY - 1989

Y1 - 1989

N2 - Combining the studies of electrical, photoluminescence and stoichiometric analyses, the defect structure of undoped CuInS2 is revealed. For a multilevel system such as CuInS2, the ionization energies were determined to be 0.038, 0.068 and 0.145eV for the sulfur vacancy, indium interstitial and indium occupying the copper vacancy, respectively. A defect model based on deviation from the ideal chemical formula was developed to illustrate the self-compensation effects, in which "quantitative" investigations of the structural defects in undoped CuInS2 crystals are provided.

AB - Combining the studies of electrical, photoluminescence and stoichiometric analyses, the defect structure of undoped CuInS2 is revealed. For a multilevel system such as CuInS2, the ionization energies were determined to be 0.038, 0.068 and 0.145eV for the sulfur vacancy, indium interstitial and indium occupying the copper vacancy, respectively. A defect model based on deviation from the ideal chemical formula was developed to illustrate the self-compensation effects, in which "quantitative" investigations of the structural defects in undoped CuInS2 crystals are provided.

KW - CuInS

KW - chemical formula deviations

KW - defect model

KW - intrinsic defects

UR - https://www.scopus.com/pages/publications/0024873061

U2 - 10.1016/0022-3697(89)90403-4

DO - 10.1016/0022-3697(89)90403-4

M3 - 文章

AN - SCOPUS:0024873061

SN - 0022-3697

VL - 50

SP - 1297

EP - 1305

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 12

ER -

The defect structure of CuInS₂. part I: Intrinsic defects

Abstract

Keywords

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