The defect structure of CuInS₂. part II: Thermal annealing defects

Combining the studies of electrical, photoluminescence and stoichiometric analyses, the incorporation of indium and sulfur into CuInS₂ was studied, and the results were correlated with calculated data based on defect chemistry. The carrier concentration varies as K'P ^{1 3}_In + K'P ^{1 2}_In. The indium atomic inter-diffusion in CuInS₂ is dominated by (1) a vacancy mechanism at low indium pressure, and (2) an interstitial mechanism at high indium pressure. The carrier concentration introduced by indium annealing depends on the stoichiometry of each sample and the annealing period, and these two factors may become unimportant in the high indium pressure region.