The demonstration and characterization of In-situ SiNx/AlGaN/GaN HEMT on 6-inch Silicon on Insulator (SOI) substrate

Hao Yu Wang, Li Yi Peng, Yuan Hsiang Cheng, Hsien Chin Chiu

Research output: Contribution to conferenceConference Paperpeer-review

1 Scopus citations

Abstract

In this work, AlGaN/GaN high electron mobility transistors (HEMTs) with an unintentionally doped (UID) u-GaN buffer and 15nm of In-situ SiNx on silicon-on-insulator (SOI) substrates were presented for RF applications. In order to investigate the effects of the SOI substrates to device characteristics, HEMT devices on SOI were fabricated alongside with same structure on high resistance Silicon (HR-Si) substrate and also alongside with the conventional devices without In-situ SiNx on high resistance Silicon (HR-Si) substrate to clarify the influence of the in-situ SiNx . Experimentally, the SOI substrate device showed better DC, breakdown voltage and RF characteristics compared to devices on HR-Si. These advantages suggest that the SOI substrate device is suitable for high speed and high-power integrated circuit applications.

Original languageEnglish
Pages321-324
Number of pages4
StatePublished - 2016
Event31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States
Duration: 16 05 201619 05 2016

Conference

Conference31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
Country/TerritoryUnited States
CityMiami
Period16/05/1619/05/16

Bibliographical note

Publisher Copyright:
© 2016, CS Mantech. All rights reserved.

Keywords

  • Gallium nitride
  • Semiconductor devices
  • Silicon nitride
  • Silicon on Insulator (SOI) substrate

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