Abstract
The circuitry was constructed by standard commercial 0.35 μm CMOS fabrication processes and consists of a low noise amplifier (LNA) and a low voltage mixer that down-converts S band RF signals into the IF band. The LNA is designed with the consideration of non-quasi-static channel resistance to accomplish the input matching both for gain and noise. A single-ended Gilbert cell mixer is designed with LC tanks in order to achieve a low voltage scheme. Then the inter-stage matching between the LNA and the mixer was accomplished by using a single integrated capacitor to save chip area.
| Original language | English |
|---|---|
| Pages (from-to) | 161-164 |
| Number of pages | 4 |
| Journal | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an |
| Volume | 27 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2004 |
Keywords
- CMOS RF
- LNA
- MMIC
- Mixer
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