The design of an RF monolithic CMOS down-converter

  • King Keong Chang
  • , Yi Chyun Chiang*
  • *Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

The circuitry was constructed by standard commercial 0.35 μm CMOS fabrication processes and consists of a low noise amplifier (LNA) and a low voltage mixer that down-converts S band RF signals into the IF band. The LNA is designed with the consideration of non-quasi-static channel resistance to accomplish the input matching both for gain and noise. A single-ended Gilbert cell mixer is designed with LC tanks in order to achieve a low voltage scheme. Then the inter-stage matching between the LNA and the mixer was accomplished by using a single integrated capacitor to save chip area.

Keywords

  • CMOS RF
  • LNA
  • MMIC
  • Mixer

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