Abstract
A millimeter-wave fully differential power amplifier with broadband performance was implemented in 90-nm CMOS technology. The proposed circuit employed a three-dimensional layout for a cascode power cell to reduce the sensitive parasitic effect. The proposed power amplifier provides a 3-dB bandwidth region ranging from 44.7 to 58.8 GHz, with a maximum small-signal gain of 21.6 dB at 49 GHz. In addition, the saturation output power and maximum power-added efficiency are more than 12.6 dBm and 7.1% within the 3-dB bandwidth region, respectively.
Original language | English |
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Title of host publication | 2017 International Workshop on Electromagnetics |
Subtitle of host publication | Applications and Student Innovation Competition, iWEM 2017 |
Editors | Yi Wang, Kwok-Kan So |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 162-163 |
Number of pages | 2 |
ISBN (Electronic) | 9781509063925 |
DOIs | |
State | Published - 05 07 2017 |
Event | 8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017 - London, United Kingdom Duration: 30 05 2017 → 01 06 2017 |
Publication series
Name | 2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017 |
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Conference
Conference | 8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017 |
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Country/Territory | United Kingdom |
City | London |
Period | 30/05/17 → 01/06/17 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
Keywords
- Integrated circuit
- millimeter-wave
- power amplifier
- transformer-matching network