The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application

Min Li Chou, Hsien Chin Chiu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A millimeter-wave fully differential power amplifier with broadband performance was implemented in 90-nm CMOS technology. The proposed circuit employed a three-dimensional layout for a cascode power cell to reduce the sensitive parasitic effect. The proposed power amplifier provides a 3-dB bandwidth region ranging from 44.7 to 58.8 GHz, with a maximum small-signal gain of 21.6 dB at 49 GHz. In addition, the saturation output power and maximum power-added efficiency are more than 12.6 dBm and 7.1% within the 3-dB bandwidth region, respectively.

Original languageEnglish
Title of host publication2017 International Workshop on Electromagnetics
Subtitle of host publicationApplications and Student Innovation Competition, iWEM 2017
EditorsYi Wang, Kwok-Kan So
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages162-163
Number of pages2
ISBN (Electronic)9781509063925
DOIs
StatePublished - 05 07 2017
Event8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017 - London, United Kingdom
Duration: 30 05 201701 06 2017

Publication series

Name2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017

Conference

Conference8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017
Country/TerritoryUnited Kingdom
CityLondon
Period30/05/1701/06/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

  • Integrated circuit
  • millimeter-wave
  • power amplifier
  • transformer-matching network

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