The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application

Min Li Chou; Hsien Chin Chiu

doi:10.1109/iWEM.2017.7968818

The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application

Min Li Chou, Hsien Chin Chiu

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A millimeter-wave fully differential power amplifier with broadband performance was implemented in 90-nm CMOS technology. The proposed circuit employed a three-dimensional layout for a cascode power cell to reduce the sensitive parasitic effect. The proposed power amplifier provides a 3-dB bandwidth region ranging from 44.7 to 58.8 GHz, with a maximum small-signal gain of 21.6 dB at 49 GHz. In addition, the saturation output power and maximum power-added efficiency are more than 12.6 dBm and 7.1% within the 3-dB bandwidth region, respectively.

Original language	English
Title of host publication	2017 International Workshop on Electromagnetics
Subtitle of host publication	Applications and Student Innovation Competition, iWEM 2017
Editors	Yi Wang, Kwok-Kan So
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	162-163
Number of pages	2
ISBN (Electronic)	9781509063925
DOIs	https://doi.org/10.1109/iWEM.2017.7968818
State	Published - 05 07 2017
Event	8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017 - London, United Kingdom Duration: 30 05 2017 → 01 06 2017

Publication series

Name	2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017

Conference

Conference	8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017
Country/Territory	United Kingdom
City	London
Period	30/05/17 → 01/06/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

Integrated circuit
millimeter-wave
power amplifier
transformer-matching network

Access to Document

10.1109/iWEM.2017.7968818

Cite this

Chou, M. L., & Chiu, H. C. (2017). The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application. In Y. Wang, & K.-K. So (Eds.), 2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017 (pp. 162-163). Article 7968818 (2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/iWEM.2017.7968818

Chou, Min Li ; Chiu, Hsien Chin. / The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application. 2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017. editor / Yi Wang ; Kwok-Kan So. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 162-163 (2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017).

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title = "The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application",

abstract = "A millimeter-wave fully differential power amplifier with broadband performance was implemented in 90-nm CMOS technology. The proposed circuit employed a three-dimensional layout for a cascode power cell to reduce the sensitive parasitic effect. The proposed power amplifier provides a 3-dB bandwidth region ranging from 44.7 to 58.8 GHz, with a maximum small-signal gain of 21.6 dB at 49 GHz. In addition, the saturation output power and maximum power-added efficiency are more than 12.6 dBm and 7.1\% within the 3-dB bandwidth region, respectively.",

keywords = "Integrated circuit, millimeter-wave, power amplifier, transformer-matching network",

author = "Chou, \{Min Li\} and Chiu, \{Hsien Chin\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017 ; Conference date: 30-05-2017 Through 01-06-2017",

year = "2017",

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Chou, ML & Chiu, HC 2017, The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application. in Y Wang & K-K So (eds), 2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017., 7968818, 2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017, Institute of Electrical and Electronics Engineers Inc., pp. 162-163, 8th International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017, London, United Kingdom, 30/05/17. https://doi.org/10.1109/iWEM.2017.7968818

The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application. / Chou, Min Li; Chiu, Hsien Chin.
2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017. ed. / Yi Wang; Kwok-Kan So. Institute of Electrical and Electronics Engineers Inc., 2017. p. 162-163 7968818 (2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - A millimeter-wave fully differential power amplifier with broadband performance was implemented in 90-nm CMOS technology. The proposed circuit employed a three-dimensional layout for a cascode power cell to reduce the sensitive parasitic effect. The proposed power amplifier provides a 3-dB bandwidth region ranging from 44.7 to 58.8 GHz, with a maximum small-signal gain of 21.6 dB at 49 GHz. In addition, the saturation output power and maximum power-added efficiency are more than 12.6 dBm and 7.1% within the 3-dB bandwidth region, respectively.

AB - A millimeter-wave fully differential power amplifier with broadband performance was implemented in 90-nm CMOS technology. The proposed circuit employed a three-dimensional layout for a cascode power cell to reduce the sensitive parasitic effect. The proposed power amplifier provides a 3-dB bandwidth region ranging from 44.7 to 58.8 GHz, with a maximum small-signal gain of 21.6 dB at 49 GHz. In addition, the saturation output power and maximum power-added efficiency are more than 12.6 dBm and 7.1% within the 3-dB bandwidth region, respectively.

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KW - millimeter-wave

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KW - transformer-matching network

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Chou ML, Chiu HC. The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application. In Wang Y, So KK, editors, 2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 162-163. 7968818. (2017 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2017). doi: 10.1109/iWEM.2017.7968818

The design of wideband transformer-coupled 90-nm CMOS power amplifier for V-band application

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Keywords

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