The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Hsien Chin Chiu; Wen Yu Lin; W. J. Hsueh; Pei Chin Chiu; Yue Ming Hsin; Jen Inn Chyi

doi:10.1016/j.microrel.2015.03.016

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Hsien Chin Chiu^*
, Wen Yu Lin
, W. J. Hsueh
, Pei Chin Chiu
, Yue Ming Hsin
, Jen Inn Chyi

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.

Original language	English
Pages (from-to)	890-893
Number of pages	4
Journal	Microelectronics Reliability
Volume	55
Issue number	6
DOIs	https://doi.org/10.1016/j.microrel.2015.03.016
State	Published - 01 05 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.

Keywords

AlSb/InAs
Hot carrier stress
Iridium
Reliability

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10.1016/j.microrel.2015.03.016

Cite this

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title = "The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors",

abstract = "In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.",

keywords = "AlSb/InAs, Hot carrier stress, Iridium, Reliability",

author = "Chiu, \{Hsien Chin\} and Lin, \{Wen Yu\} and Hsueh, \{W. J.\} and Chiu, \{Pei Chin\} and Hsin, \{Yue Ming\} and Chyi, \{Jen Inn\}",

year = "2015",

month = may,

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doi = "10.1016/j.microrel.2015.03.016",

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T1 - The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

AU - Chiu, Hsien Chin

AU - Lin, Wen Yu

AU - Hsueh, W. J.

AU - Chiu, Pei Chin

AU - Hsin, Yue Ming

AU - Chyi, Jen Inn

PY - 2015/5/1

Y1 - 2015/5/1

N2 - In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.

AB - In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.

KW - AlSb/InAs

KW - Hot carrier stress

KW - Iridium

KW - Reliability

UR - https://www.scopus.com/pages/publications/84929032191

U2 - 10.1016/j.microrel.2015.03.016

DO - 10.1016/j.microrel.2015.03.016

M3 - 文章

AN - SCOPUS:84929032191

SN - 0026-2714

VL - 55

SP - 890

EP - 893

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 6

ER -

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Abstract

Bibliographical note

Keywords

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