The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers

Tzer En Nee; Jen Cheng Wang; Hui Tang Shen; Ya Fen Wu

doi:10.1016/j.jcrysgro.2006.10.127

The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers

Tzer En Nee^*, Jen Cheng Wang, Hui Tang Shen, Ya Fen Wu

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

The effect of the temperature on the characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with multiquantum barriers (MQBs) has been investigated in-depth over a broad range of temperatures from 200 to 370 K. It was found that if the device had an MQB structure it exhibited stronger blue emission as well as had a larger capture cross-section fraction than did the conventional MQW LEDs. This was due to the MQB configuration, which offered a large contribution to the exciton recombination; the adoption of an appropriate heterobarrier allows the achievement of improved LED performance. However, the unavoidable disordering formed in the In-rich MQB heterostructures caused not only EL intensity deterioration, but also rapid quenching rate at temperatures above 300 K.

Original language	English
Pages (from-to)	714-718
Number of pages	5
Journal	Journal of Crystal Growth
Volume	298
Issue number	SPEC. ISS
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.127
State	Published - 01 2007

Keywords

A1. Excitation cross sections
A3. Multiple quantum well
A3. Multiquantum barrier
B3. Light-emitting diodes

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10.1016/j.jcrysgro.2006.10.127

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title = "The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers",

abstract = "The effect of the temperature on the characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with multiquantum barriers (MQBs) has been investigated in-depth over a broad range of temperatures from 200 to 370 K. It was found that if the device had an MQB structure it exhibited stronger blue emission as well as had a larger capture cross-section fraction than did the conventional MQW LEDs. This was due to the MQB configuration, which offered a large contribution to the exciton recombination; the adoption of an appropriate heterobarrier allows the achievement of improved LED performance. However, the unavoidable disordering formed in the In-rich MQB heterostructures caused not only EL intensity deterioration, but also rapid quenching rate at temperatures above 300 K.",

keywords = "A1. Excitation cross sections, A3. Multiple quantum well, A3. Multiquantum barrier, B3. Light-emitting diodes",

author = "Nee, {Tzer En} and Wang, {Jen Cheng} and Shen, {Hui Tang} and Wu, {Ya Fen}",

year = "2007",

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doi = "10.1016/j.jcrysgro.2006.10.127",

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AU - Nee, Tzer En

AU - Wang, Jen Cheng

AU - Shen, Hui Tang

AU - Wu, Ya Fen

PY - 2007/1

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N2 - The effect of the temperature on the characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with multiquantum barriers (MQBs) has been investigated in-depth over a broad range of temperatures from 200 to 370 K. It was found that if the device had an MQB structure it exhibited stronger blue emission as well as had a larger capture cross-section fraction than did the conventional MQW LEDs. This was due to the MQB configuration, which offered a large contribution to the exciton recombination; the adoption of an appropriate heterobarrier allows the achievement of improved LED performance. However, the unavoidable disordering formed in the In-rich MQB heterostructures caused not only EL intensity deterioration, but also rapid quenching rate at temperatures above 300 K.

AB - The effect of the temperature on the characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with multiquantum barriers (MQBs) has been investigated in-depth over a broad range of temperatures from 200 to 370 K. It was found that if the device had an MQB structure it exhibited stronger blue emission as well as had a larger capture cross-section fraction than did the conventional MQW LEDs. This was due to the MQB configuration, which offered a large contribution to the exciton recombination; the adoption of an appropriate heterobarrier allows the achievement of improved LED performance. However, the unavoidable disordering formed in the In-rich MQB heterostructures caused not only EL intensity deterioration, but also rapid quenching rate at temperatures above 300 K.

KW - A1. Excitation cross sections

KW - A3. Multiple quantum well

KW - A3. Multiquantum barrier

KW - B3. Light-emitting diodes

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VL - 298

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The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers

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Keywords

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