The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles

Wei-Tzer Wang; Jen-Cheng Wang; Tzer-En Nee

The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles

Wei-Tzer Wang, Jen-Cheng Wang, Tzer-En Nee

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2009
Event	International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009) - Singapore Duration: 28 06 2009 → 03 07 2009

Conference

Conference	International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009)
Period	28/06/09 → 03/07/09

Cite this

Wang, W.-T., Wang, J.-C., & Nee, T.-E. (2009). The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles. International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009).

Wang, Wei-Tzer ; Wang, Jen-Cheng ; Nee, Tzer-En. / The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles. International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009).

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title = "The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles",

author = "Wei-Tzer Wang and Jen-Cheng Wang and Tzer-En Nee",

year = "2009",

language = "American English",

note = "International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009) ; Conference date: 28-06-2009 Through 03-07-2009",

}

Wang, W-T, Wang, J-C & Nee, T-E 2009, 'The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles', International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009), 28/06/09 - 03/07/09.

The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles. / Wang, Wei-Tzer; Wang, Jen-Cheng; Nee, Tzer-En.
2009. International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009).

Research output: Contribution to conference › Proceeding

TY - CONF

T1 - The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles

AU - Wang, Wei-Tzer

AU - Wang, Jen-Cheng

AU - Nee, Tzer-En

PY - 2009

Y1 - 2009

M3 - Proceeding

T2 - International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009)

Y2 - 28 June 2009 through 3 July 2009

ER -

Wang WT, Wang JC, Nee TE. The effect of indium tin oxide ohmic contact layer on the luminescence and electrical properties of the silicon nanostructure metal-oxide-semiconductor light-emitting diode with SiO2 nanoparticles. 2009. International of Conference on Materials for Advanced Technologies 2009 (ICMAT2009)” and “International Union of Materials Research Societies International Conference in Asia 2009 (IUMRS-ICA 2009).