The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

Wei Jen Chen*, Da Chuan Kuo, Cheng Wei Hung, Chih Chun Ke, Hui Tang Shen, Jen Cheng Wang, Ya Fen Wu, Tzer En Nee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this work, thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30°C to 100°C. The current-dependent electroluminescence (EL) spectra, current-voltage (I-V) curves and luminescence-current (L-I) curve have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW heterostructures. Experimentally, both the forward voltages decreased with slope of -2.6 mV/K and the emission peak wavelength increased with slope of +4.5 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the band gap shrinkage effect. With increasing injection current, it has been found the strong current-dependent blueshift of -0.048 nm/mA in EL spectra. It was attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect, resulted from the piezoelectric polarization and the spontaneous polarization in InGaN/GaN heterostructures. The junction temperature calculated by forward voltage was from 25.6 to 14.5°C and by emission peak shift was from 22.4 to 35.6°C.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XV
DOIs
StatePublished - 2007
EventPhysics and Simulation of Optoelectronic Devices XV - San Jose, CA, United States
Duration: 22 01 200725 01 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6468
ISSN (Print)0277-786X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XV
Country/TerritoryUnited States
CitySan Jose, CA
Period22/01/0725/01/07

Keywords

  • Emission peak
  • Forward voltage
  • Junction temperature
  • Light-emitting diodes
  • Multiple quantum well
  • Quantum efficiency

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