The effect of post-baking temperature and thickness of ZnO electron transport layers for efficient planar heterojunction organometal-trihalide perovskite solar cells

Kun Mu Lee*, Chuan Jung Lin, Yin Hsuan Chang, Ting Han Lin, Vembu Suryanarayanan, Ming Chung Wu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

6 Scopus citations

Abstract

Solution-processed zinc oxide (ZnO)-based planar heterojunction perovskite photovoltaic device is reported in this study. The photovoltaic device benefits fromthe ZnO filmas a high-conductivity and high-transparent electron transport layer. The optimal electron transport layer thickness and post-baking temperature for ZnO are systematically studied by scanning electron microscopy, photoluminescence and time-resolved photoluminescence spectroscopy, and X-ray diffraction. Optimized perovskite solar cells (PSCs) show an open-circuit voltage, a short-circuit current density, and a fill factor of 1.04 V, 18.71 mA/cm 2 , and 70.2%, respectively. The highest power conversion efficiency of 13.66% was obtained when the device was prepared with a ZnO electron transport layer with a thickness of ~20 nm and when post-baking at 180 °C for 30 min. Finally, the stability of the highest performance ZnO-based PSCs without encapsulation was investigated in detail.

Original languageEnglish
Article number215
JournalCoatings
Volume7
Issue number12
DOIs
StatePublished - 01 12 2017

Bibliographical note

Publisher Copyright:
© 2017 by the authors.

Keywords

  • Electron transport layer
  • Perovskite
  • Photovoltaic
  • Zinc oxide

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