The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Chao Sung Lai; Tan Fu Lei; Chung Len Lee

doi:10.1109/55.406796

The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Chao Sung Lai, Tan Fu Lei, Chung Len Lee

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

22 Scopus citations

Abstract

N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

Original language	English
Pages (from-to)	385-386
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	16
Issue number	9
DOIs	https://doi.org/10.1109/55.406796
State	Published - 09 1995
Externally published	Yes

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title = "The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O",

abstract = "N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.",

author = "Lai, {Chao Sung} and Lei, {Tan Fu} and Lee, {Chung Len}",

year = "1995",

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N2 - N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

AB - N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

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JO - IEEE Electron Device Letters

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The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Abstract

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