The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Chao Sung Lai; Tan Fu Lei; Chung Len Lee

doi:10.1109/55.406796

The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Chao Sung Lai
, Tan Fu Lei
, Chung Len Lee

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

22 Scopus citations

Abstract

N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

Original language	English
Pages (from-to)	385-386
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	16
Issue number	9
DOIs	https://doi.org/10.1109/55.406796
State	Published - 09 1995
Externally published	Yes

Access to Document

10.1109/55.406796

Cite this

@article{b65acae6076248ada4af5f330745ae0a,

title = "The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O",

abstract = "N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.",

author = "Lai, \{Chao Sung\} and Lei, \{Tan Fu\} and Lee, \{Chung Len\}",

year = "1995",

month = sep,

doi = "10.1109/55.406796",

language = "英语",

volume = "16",

pages = "385--386",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

AU - Lai, Chao Sung

AU - Lei, Tan Fu

AU - Lee, Chung Len

PY - 1995/9

Y1 - 1995/9

N2 - N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

AB - N20 was used to grow silicon polyoxide. It was found that the N20-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2 -grown poly oxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.

UR - https://www.scopus.com/pages/publications/0029378967

U2 - 10.1109/55.406796

DO - 10.1109/55.406796

M3 - 文章

AN - SCOPUS:0029378967

SN - 0741-3106

VL - 16

SP - 385

EP - 386

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

The Electrical Characteristics of Polysilicon Oxide Grown in Pure N2O

Abstract

Access to Document

Other files and links

Fingerprint

Cite this