The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

Hsien Chin Chiu; Ji Fan Chi; Hsuan Ling Kao; Chia Yi Chu; Kuan Liang Cho; Feng Tso Chien

doi:10.1016/j.microrel.2016.01.014

The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

Hsien Chin Chiu, Ji Fan Chi, Hsuan Ling Kao, Chia Yi Chu, Kuan Liang Cho, Feng Tso Chien

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (E_a) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF₄ and CHF₃ plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.

Original language	English
Pages (from-to)	44-48
Number of pages	5
Journal	Microelectronics Reliability
Volume	59
DOIs	https://doi.org/10.1016/j.microrel.2016.01.014
State	Published - 01 04 2016

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd. All rights reserved.

Keywords

ESD
Fluorine
GaN
Low-frequency noise

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10.1016/j.microrel.2016.01.014

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title = "The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment",

abstract = "In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.",

keywords = "ESD, Fluorine, GaN, Low-frequency noise",

author = "Chiu, {Hsien Chin} and Chi, {Ji Fan} and Kao, {Hsuan Ling} and Chu, {Chia Yi} and Cho, {Kuan Liang} and Chien, {Feng Tso}",

year = "2016",

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doi = "10.1016/j.microrel.2016.01.014",

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T1 - The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

AU - Chiu, Hsien Chin

AU - Chi, Ji Fan

AU - Kao, Hsuan Ling

AU - Chu, Chia Yi

AU - Cho, Kuan Liang

AU - Chien, Feng Tso

PY - 2016/4/1

Y1 - 2016/4/1

N2 - In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.

AB - In this work, the electrostatic discharge (ESD) protection of Schottky diode with fluorine-based plasma treatment is proven by transmission-line pulse (TLP) measurement. And the low-frequency noise (LFN) is used to determine the activation energy (Ea) of a GaN Schottky diode with plasma treatment. This experiment compares the Schottky diode with CF4 and CHF3 plasma treatment, respectively with a standard Schottky diode to determine the characteristics and to assess the low-frequency noise and the ESD protection ability.

KW - ESD

KW - Fluorine

KW - GaN

KW - Low-frequency noise

UR - http://www.scopus.com/inward/record.url?scp=84979464883&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2016.01.014

DO - 10.1016/j.microrel.2016.01.014

M3 - 文章

AN - SCOPUS:84979464883

SN - 0026-2714

VL - 59

SP - 44

EP - 48

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

Abstract

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Keywords

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