Abstract
The field emission (FE) characteristics of boron nitride (BN) film deposition on the individual and vertically aligned carbon nanotube (CNT) were investigated. In this work, the CNTs were deposited with BN film by both magnetron sputtering and plasma-assisted chemical vapor deposition (PACVD) methods. The field emission (FE) characteristics measured after the BN film deposition revealed that the turn-on field was significantly reduced and the maximum emission current increased by two orders of magnitude higher than that of bare CNT with a proper deposition thickness. The experimental results show that with different deposited conditions, the thickness has significant effects on the FE characteristics. In addition, from the measured turn-on filed and as defined field enhancement factor, CNTs with sputter-deposited BN film demonstrated better FE performance than those with BN deposited by PACVD.
Original language | English |
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Pages (from-to) | 1393-1397 |
Number of pages | 5 |
Journal | Diamond and Related Materials |
Volume | 16 |
Issue number | 4-7 SPEC. ISS. |
DOIs | |
State | Published - 04 2007 |
Externally published | Yes |
Keywords
- Boron nitride
- Carbon nanotubes
- Field emission
- PACVD
- Raman spectroscopy
- Turn-on field