The Impact of AlxGa1-xN back barrier in AlGaN/GaN high electron mobility transistors (HEMTs) on six-inch MCZ Si substrate

H. Y. Wang, H. C. Chiu*, W. C. Hsu, C. M. Liu, C. Y. Chuang, J. Z. Liu, Y. L. Huang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

13 Scopus citations

Abstract

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following an increase of the Al mole fraction due to the enhancement of the back barrier height. Increasing the AlGaN thickness deteriorated device performance because of the generation of lattice mismatch induced surface defects. The dynamic on-resistance (RON) measurements indicated that the Al mole fraction and thickness of the B.B. both affected the buffer trapping phenomenon. In addition, the thickness of B.B. also influenced the substrate heat dissipation ability which is also a key index for high power RF device applications.

Original languageEnglish
Article number570
JournalCoatings
Volume10
Issue number6
DOIs
StatePublished - 01 06 2020

Bibliographical note

Publisher Copyright:
© 2020 by the authors.

Keywords

  • AlGaN back barrier
  • GaN
  • HEMT
  • Microwave device

Fingerprint

Dive into the research topics of 'The Impact of AlxGa1-xN back barrier in AlGaN/GaN high electron mobility transistors (HEMTs) on six-inch MCZ Si substrate'. Together they form a unique fingerprint.

Cite this