The impact of ion-implantation damage on dopant diffusion

Ruey Dar Chang, Ray Chen Deng, Show In Hsu, Song Tang Chiang

Research output: Contribution to conferenceConference Paperpeer-review

Abstract

The dopant diffusion has been investigated for silicon substrates implanted with high dosages above the amorphization threshold. Both the transient enhanced diffusion and the uphill diffusion are shown in boron, phosphorus, and arsenic profiles with Si ion implants. The uphill diffusion toward residual damages has been simulated with a phenomenological segregation model. The boron enhanced diffusion with As and P implantation is also affected by the n-type doping besides implant damages.

Original languageEnglish
DOIs
StatePublished - 1994
Externally publishedYes
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 12 07 199415 07 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/TerritoryTaiwan
CityHsinchu
Period12/07/9415/07/94

Bibliographical note

Publisher Copyright:
© 1994 IEEE.

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