| Translated title of the contribution | 多晶矽閘極側邊氧化層厚度對金氧半場效電晶體GIDL特性之影響 |
|---|---|
| Original language | American English |
| Supervisors/Advisors |
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| State | Published - 2005 |
| Externally published | Yes |
The impact of poly gate sidewall oxide thickness on MOSFET's gate-induced drain leakage behavior
黃道坤
Research output: Types of Thesis › Master's thesis